Datasheet > Q67045A5051

Q67045A5051

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
12页	382K
描述
CoolMOS Power Transistor

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数据手册

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Q67045A5051 数据手册

SPW47N60CFD

CoolMOS^TMPower Transistor

Features

Product Summary

V _DS

600

0.083

Ω

• New revolutionary high voltage technology

• Intrinsic fast-recovery body diode

• Extremely low reverse recovery charge

• Ultra low gate charge

R _DS(on),max

I _D

PG-TO247

• Extreme dv /dt rated

• High peak current capability

• Periodic avalanche rated

• Qualified according to JEDEC¹⁾for target applications

• Pb-free lead plating; RoHS compliant

Type

Package

Ordering Code

Marking

SPW47N60CFD

PG-TO247

Q67045A5051

47N60CFD

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _C=25 °C

T _C=100 °C

T _C=25 °C

Continuous drain current

Pulsed drain current¹⁾

I _D,pulse

E _AS

E _AR

I _AR

115

1800

I _D=10 A, V _DD=50 V

I _D=20 A, V _DD=50 V

Avalanche energy, single pulse

Avalanche energy, repetitive t _AR

2),3)

Avalanche current, repetitive t _AR

Drain source voltage slope

Reverse diode dv /dt

I _D=46 A, V _DS=480 V,

T _j=125 °C

dv /dt

V/ns

600

V/ns

A/µs

I _S=46 A, V _DS=480 V,

T _j=125 °C

Maximum diode commutation speed di /dt

V _GS

±20

Gate source voltage

static

±30

AC (f >1 Hz)

T _C=25 °C

P _tot

417

Power dissipation

T _j, T _stg

-55 ... 150

Operating and storage temperature

°C

Rev. 1.2

page 1

2005-06-28

12 3 4 5 6 7...12

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