Datasheet > Q67042-S4153

Q67042-S4153

更新时间： 2022-02-26 12:23:34

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	348K
描述
OptiMOS 2 Power-Transistor

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数据手册

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Q67042-S4153 数据手册

IPB09N03LA

IPI09N03LA, IPP09N03LA

OptiMOS^®2 Power-Transistor

Product Summary

Features

V _DS

8.9

• Ideal for high-frequency dc/dc converters

• N-channel

R _DS(on),max(SMD version)

mΩ

I _D

• Logic level

• Excellent gate charge x R _DS(on)product (FOM)

• Very low on-resistance R _DS(on)

P-TO263-3-2

P-TO262-3-1

P-TO220-3-1

• Superior thermal resistance

• 175 °C operating temperature

• dv /dt rated

Type

Package

Ordering Code Marking

IPB09N03LA

IPI09N03LA

IPP09N03LA

P-TO263-3-2

P-TO262-3-1

P-TO220-3-1

Q67042-S4151

Q67042-S4152

Q67042-S4153

09N03LA

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

T _C=25 °C¹⁾

I _D

Continuous drain current

T _C=100 °C

T _C=25 °C²⁾

I _D,pulse

Pulsed drain current

350

E _AS

I _D=45 A, R _GS=25 Ω

Avalanche energy, single pulse

I _D=50 A, V _DS=20 V,

di /dt =200 A/µs,

Reverse diode dv /dt

dv /dt

kV/µs

_j,max=175 °C

Gate source voltage³⁾

V _GS

±20

P _tot

T _C=25 °C

Power dissipation

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... 175

55/175/56

Rev. 1.3

page 1

2003-12-18

12 3 4 5 6 7...10

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