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PZT5401-TP-HF PDF预览

PZT5401-TP-HF

更新时间: 2024-09-08 14:35:23
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
2页 402K
描述
Small Signal Bipolar Transistor,

PZT5401-TP-HF 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.69
湿度敏感等级:1峰值回流温度(摄氏度):260
处于峰值回流温度下的最长时间:10Base Number Matches:1

PZT5401-TP-HF 数据手册

 浏览型号PZT5401-TP-HF的Datasheet PDF文件第2页 
M C C  
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20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
PZT5401  
Features  
·
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
ꢀꢁ High Voltage Amplifier Application  
ꢀꢁ Epoxy meets UL 94 V-0 flammability rating  
ꢀꢁ Moisure Sensitivity Level 1  
PNP  
Plastic-Encapsulate  
·
Halogen free available upon request by adding suffix "-HF"  
Marking: ZT5401  
Transistors  
Maximum Ratings  
Symbol  
Rating  
Value  
-150  
-160  
-5.0  
0.6  
1.0  
125  
-55 to +150  
Unit  
V
V
V
A
W
OC  
OC  
SOT-223  
VCEO  
VCBO  
VEBO  
IC  
PC  
TJ  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current DC  
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
TSTG  
Electrical Characteristics @ 25C Unless Otherwise Specified  
Typ  
Symbol  
Parameter  
Min  
Max Units  
OFF CHARACTERISTICS  
VCBO  
VCEO  
VEBO  
ICBO  
Collector-Base Voltage  
(IC=-100uAdc, IE=0)  
Collector-Emitter Voltage  
(IC=-1mAdc, IB=0)  
Emitter-Base Voltage  
(IE=-10uAdc, IC=0)  
Collector Cutoff Current  
(VCB=-120Vdc, IE=0)  
Emitter Cutoff Current  
(VEB=-3.0Vdc, IC=0)  
DC Current Gain  
-160  
---  
---  
---  
---  
---  
Vdc  
-150  
-5.0  
---  
Vdc  
Vdc  
---  
-50  
-50  
2
3
1
---  
---  
nAdc  
nAdc  
IEBO  
---  
hFE(1)  
1. BASE  
(VCE=-5.0Vdc, IC=-1mAdc)  
50  
---  
---  
---  
---  
2. COLLECTOR  
3. EMITTER  
hFE(2)  
hFE(3)  
DC Current Gain  
(VCE=-5.0Vdc, IC=-10mAdc)  
DC Current Gain  
300  
---  
60  
50  
---  
---  
---  
---  
DIMENSIONS  
INCHES  
MM  
---  
(VCE=-5.0Vdc, IC=-50mAdc)  
Collector-Emitter Saturation Voltage  
(IC=-10mAdc,IB=-1mAdc)  
DIM  
A
MIN  
.248  
MAX  
MIN  
MAX  
NOTE  
.264  
6.30  
6.70  
VCE(sat)  
Vdc  
-0.2  
B
C
D
E
F
.130  
.264  
.001  
.114  
.146  
.287  
.004  
.122  
3.30  
6.70  
0.02  
2.90  
3.70  
7.30  
0.10  
3.10  
VCE(sat)  
VBE(sat)  
VBE(sat)  
fT  
Collector-Emitter Saturation Voltage  
(IC=-50mAdc,IB=-5mAdc)  
Vdc  
---  
---  
-0.5  
.091  
2.30  
Base-Emitter Voltage  
(IC=-10mAdc,IB=-1mAdc)  
Base-Emitter Voltage  
(IC=-50mAdc,IB=-5mAdc)  
Transition Frequency  
(VCE=-10Vdc, IC=-10mAdc,  
f=100MHz)  
Vdc  
Vdc  
---  
---  
---  
---  
-1  
-1  
G
- - -  
.071  
.014  
---  
---  
0.23  
0.75  
1.80  
0.35  
- - -  
H
J
.009  
.030  
100  
---  
---  
---  
300  
6
MHz  
pF  
Collector output capacitance  
---  
Cob  
(VCB=-10Vdc, IE=0, f=1MHz)  
www.mccsemi.com  
1 of 2  
Revision: A  
2014/11/03  

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