Datasheet > PZT5551

PZT5551

更新时间： 2024-09-08 03:40:27

品牌	Logo	应用领域
WEITRON		晶体晶体管
页数	文件大小	规格书
4页	357K
描述
NPN Silicon Planar Epitaxial Transistor

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中文翻译

获取价格

技术参数
数据手册

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PZT5551 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.64

PZT5551 数据手册

PZT5551

NPN Silicon Planar Epitaxial Transistor

COLLECTOR

2,4

1. BASE

2.COLLECTOR

3.EMITTER

4.COLLECTOR

BASE

SOT-223

EMITTER

ABSOLUTE MAXIMUM RATINGS

(T =25˚C)

Symbol

Unit

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Value

160

180

CEO

CBO

EBO

600

Collector Current (DC)

Total Device Disspation

Junction Temperature

Storage, Temperature

˚C

1.5

150

-55 to +150

Tstg

Device Marking

PZT5551=5551

ELECTRICAL CHARACTERISTICS

Characteristics

Symbol Min

Typ

Max

Unit

Collector-Emitter Breakdown Voltage

V_(BR)CEO

V_(BR)CBO

V_(BR)EBO

I_CBO

160

180

(I =1mA,I =0)

Collector-Base Breakdown Voltage

(I =100µA,I =0)

Emitter-Base Breakdown Voltage

(I =10 µA,I =0)

Collector-Emitter Cutoff Current

(V =120V,I =0)

Emitter-Base Cutoff Current

I_EBO

(V =4V,I =0)

WEITRON

http://www.weitron.com.tw

1/4

05-Jul-05

12 3 4

中文翻译

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PZT5551-B-AA3-C-R	UTC	获取价格	HIGH VOLTAGE SWITCHING TRANSISTOR
PZT5551-B-AA3-E-R	UTC	获取价格	HIGH VOLTAGE SWITCHING TRANSISTOR