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PYA28C64-25LMB PDF预览

PYA28C64-25LMB

更新时间: 2024-09-24 00:26:35
品牌 Logo 应用领域
PYRAMID /
页数 文件大小 规格书
10页 676K
描述
Access Times of 150, 200, 250 and 350ns Fast Byte Write (200us or 1 ms)

PYA28C64-25LMB 数据手册

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PYA28C64(X)  
8K X 8 EEPROM  
FEATURES  
Access Times of 150, 200, 250 and 350ns  
Single 5V±10% Power Supply  
CMOS & TTL Compatible Inputs and Outputs  
Endurance:  
- 10,000 Write Cycles  
- 100,000 Write Cycles (optional)  
Fast Byte Write (200µs or 1 ms)  
Data Retention: 10 Years  
Low Power CMOS:  
- 60 mA Active Current  
- 150 µA Standby Current  
Available in the following package:  
– 28-Pin 600 mil Ceramic DIP  
– 32-Pin Ceramic LCC (450x550 mils)  
Fast Write Cycle Time  
RDY/BUSY pin is not connected for the  
PYA28C64X  
PIN CONFIGURATIONS  
DESCRIPTION  
ThePYA28C64isa5Volt8Kx8EEPROM. ThePYA28C64  
featuresDATA andRDY/BUSY(PYA28C64only)toindicate  
early completion of a Write Cycle. Data Retention is 10  
Years. The device is available in a 28-Pin 600 mil wide  
Ceramic DIP and 32-Pin LCC.  
DIP (C5-1)  
FUNCTIONAL BLOCK DIAGRAM  
LCC (L6)  
NOTE: The RDY/BUSY pin is not connected for the PYA28C64X.  
Revised June 2012  
Document # EEPROM105 REV B  

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