生命周期: | Active | 包装说明: | 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-28 |
Reach Compliance Code: | compliant | 风险等级: | 5.73 |
最长访问时间: | 200 ns | 其他特性: | LG-MAX |
JESD-30 代码: | R-CDIP-T28 | 长度: | 37.846 mm |
内存密度: | 262144 bit | 内存集成电路类型: | EEPROM |
内存宽度: | 8 | 功能数量: | 1 |
端子数量: | 28 | 字数: | 32768 words |
字数代码: | 32000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 125 °C | 最低工作温度: | -55 °C |
组织: | 32KX8 | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装代码: | DIP | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 并行/串行: | PARALLEL |
编程电压: | 5 V | 座面最大高度: | 5.8928 mm |
最大供电电压 (Vsup): | 5.5 V | 最小供电电压 (Vsup): | 4.5 V |
标称供电电压 (Vsup): | 5 V | 表面贴装: | NO |
技术: | CMOS | 温度等级: | MILITARY |
端子形式: | THROUGH-HOLE | 端子节距: | 2.54 mm |
端子位置: | DUAL | 宽度: | 15.24 mm |
最长写入周期时间 (tWC): | 10 ms | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PYA28C256-25LM | PYRAMID |
获取价格 |
EEPROM, 32KX8, 200ns, Parallel, CMOS, CQCC32, 0.450 X 0.550 INCH, CERAMIC, LCC-32 | |
PYA28C256-25LMB | PYRAMID |
获取价格 |
Access Times of 150, 200, 250 and 350ns Software Data Protection | |
PYA28C256E12CWM | PYRAMID |
获取价格 |
EEPROM 5V, CDIP28, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-28 | |
PYA28C256E-12CWM | PYRAMID |
获取价格 |
Access Times of 150, 200, 250 and 350ns Software Data Protection | |
PYA28C256E12CWMB | PYRAMID |
获取价格 |
EEPROM 5V, CDIP28, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-28 | |
PYA28C256E-12CWMB | PYRAMID |
获取价格 |
Access Times of 150, 200, 250 and 350ns Software Data Protection | |
PYA28C256E-12LM | PYRAMID |
获取价格 |
Access Times of 150, 200, 250 and 350ns Software Data Protection | |
PYA28C256E12LMB | PYRAMID |
获取价格 |
EEPROM 5V, CQCC32, 0.450 X 0.550 INCH, CERAMIC, CHIP-32 | |
PYA28C256E-12LMB | PYRAMID |
获取价格 |
Access Times of 150, 200, 250 and 350ns Software Data Protection | |
PYA28C256E15CWM | PYRAMID |
获取价格 |
EEPROM 5V, CDIP28, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-28 |