生命周期: | Active | 包装说明: | 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-28 |
Reach Compliance Code: | compliant | 风险等级: | 5.28 |
Is Samacsys: | N | 最长访问时间: | 120 ns |
其他特性: | LG-MAX | 命令用户界面: | NO |
数据轮询: | YES | 数据保留时间-最小值: | 10 |
耐久性: | 10000 Write/Erase Cycles | JESD-30 代码: | R-CDIP-T28 |
长度: | 37.846 mm | 内存密度: | 262144 bit |
内存集成电路类型: | EEPROM | 内存宽度: | 8 |
功能数量: | 1 | 端子数量: | 28 |
字数: | 32768 words | 字数代码: | 32000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 125 °C |
最低工作温度: | -55 °C | 组织: | 32KX8 |
输出特性: | 3-STATE | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装代码: | DIP | 封装等效代码: | DIP28,.6 |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
页面大小: | 64 words | 并行/串行: | PARALLEL |
编程电压: | 5 V | 座面最大高度: | 5.8928 mm |
最大待机电流: | 0.0003 A | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 4.5 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | NO | 技术: | CMOS |
温度等级: | MILITARY | 端子形式: | THROUGH-HOLE |
端子节距: | 2.54 mm | 端子位置: | DUAL |
切换位: | YES | 宽度: | 15.24 mm |
最长写入周期时间 (tWC): | 10 ms | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PYA28C256E15CWMB | PYRAMID |
获取价格 |
EEPROM 5V, CDIP28, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-28 | |
PYA28C256E-15CWMB | PYRAMID |
获取价格 |
暂无描述 | |
PYA28C256E15LM | PYRAMID |
获取价格 |
EEPROM 5V, CQCC32, 0.450 X 0.550 INCH, CERAMIC, CHIP-32 | |
PYA28C256E-15LM | PYRAMID |
获取价格 |
Access Times of 150, 200, 250 and 350ns Software Data Protection | |
PYA28C256E15LMB | PYRAMID |
获取价格 |
EEPROM 5V, CQCC32, 0.450 X 0.550 INCH, CERAMIC, CHIP-32 | |
PYA28C256E-15LMB | PYRAMID |
获取价格 |
Access Times of 150, 200, 250 and 350ns Software Data Protection | |
PYA28C256E20CWM | PYRAMID |
获取价格 |
EEPROM 5V, CDIP28, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-28 | |
PYA28C256E-20CWM | PYRAMID |
获取价格 |
Access Times of 150, 200, 250 and 350ns Software Data Protection | |
PYA28C256E-20CWMB | PYRAMID |
获取价格 |
Access Times of 150, 200, 250 and 350ns Software Data Protection | |
PYA28C256E-20LM | PYRAMID |
获取价格 |
Access Times of 150, 200, 250 and 350ns Software Data Protection |