是否Rohs认证: | 符合 | 生命周期: | Transferred |
零件包装代码: | TSSOP | 包装说明: | SMALL OUTLINE, R-PDSO-G6 |
针数: | 6 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.95 |
风险等级: | 6.95 | 其他特性: | BUILT-IN BIAS RESISTOR RATIO IS 1 |
最大集电极电流 (IC): | 0.1 A | 基于收集器的最大容量: | 3.5 pF |
集电极-发射极最大电压: | 50 V | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE): | 60 | JESD-30 代码: | R-PDSO-G6 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 2 | 端子数量: | 6 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | NPN |
功耗环境最大值: | 0.4 W | 最大功率耗散 (Abs): | 0.2 W |
认证状态: | Not Qualified | 子类别: | BIP General Purpose Small Signal |
表面贴装: | YES | 端子面层: | Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 40 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | VCEsat-Max: | 0.3 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PUMH10 | NXP |
获取价格 |
NPN/NPN resistor-equipped transistors; R1 = 2.2 kohm, R2 = 47 kohm | |
PUMH10 | NEXPERIA |
获取价格 |
50 V, 100 mA NPN/NPN resistor-equipped double | |
PUMH10,115 | NXP |
获取价格 |
PEMH10; PUMH10 - NPN/NPN resistor-equipped tr | |
PUMH10,125 | NXP |
获取价格 |
PEMH10; PUMH10 - NPN/NPN resistor-equipped tr | |
PUMH10-Q | NEXPERIA |
获取价格 |
NPN/NPN resistor-equipped double transistor; | |
PUMH10T/R | NXP |
获取价格 |
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-88, 6 PI | |
PUMH11 | NXP |
获取价格 |
NPN resistor-equipped double transistor | |
PUMH11 | NEXPERIA |
获取价格 |
50 V, 100 mA NPN/NPN resistor-equipped double | |
PUMH11,115 | NXP |
获取价格 |
PEMH11; PUMH11 - NPN/NPN resistor-equipped tr | |
PUMH11/T1 | NXP |
获取价格 |
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-88, 6 PI |