Datasheet > PUMH13115

PUMH13115

更新时间： 2024-02-22 00:44:26

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管
页数	文件大小	规格书
14页	623K
描述
NPN/NPN double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages.

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中文翻译

获取价格

数据手册

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PUMH13115 数据手册

PEMH13; PUMH13

NPN/NPN resistor-equipped transistors;

R1 = 4.7 k, R2 = 47 k

Rev. 4 — 6 December 2011

Product data sheet

1. Product profile

1.1 General description

NPN/NPN double Resistor-Equipped Transistors (RET) in Surface-Mounted

Device (SMD) plastic packages.

Table 1.

Product overview

Type number Package

NXP

NPN/PNP

complement

PNP/PNP

complement

Package

configuration

JEITA

PEMH13

PUMH13

SOT666

PEMD13

PUMD13

PEMB13

PUMB13

ultra small and flat lead

very small

SOT363 SC-88

1.2 Features and benefits

 100 mA output current capability

 Built-in bias resistors

 Reduces component count

 Reduces pick and place costs

 AEC-Q101 qualified

 Simplifies circuit design

1.3 Applications

 Low current peripheral driver

 Control of IC inputs

 Replaces general-purpose transistors in digital applications

1.4 Quick reference data

Table 2.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

V_CEOcollector-emitter voltage

I_O

open base

output current

100

6.1

k

bias resistor 1 (input)

bias resistor ratio

3.3

4.7

R2/R1

12 3 4 5 6 7...14

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