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PUMH11 PDF预览

PUMH11

更新时间: 2024-11-03 11:11:39
品牌 Logo 应用领域
安世 - NEXPERIA 开关光电二极管晶体管
页数 文件大小 规格书
11页 790K
描述
50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 10 kΩ, R2 = 10 kΩProduction

PUMH11 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G6Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.68
Is Samacsys:N其他特性:BUILT IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):30
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:6最高工作温度:150 °C
最低工作温度:-65 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
参考标准:AEC-Q101表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):230 MHzBase Number Matches:1

PUMH11 数据手册

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PUMH11  
50 V, 100 mA NPN/NPN resistor-equipped double transistor;  
R1 = 10 kΩ, R2 = 10 kΩ  
1 October 2022  
Product data sheet  
1. General description  
NPN/NPN double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-  
Mounted Device (SMD) plastic package.  
NPN/PNP complement: PUMD3  
PNP/PNP complement: PUMB11  
2. Features and benefits  
100 mA output current capability  
Built-in bias resistors  
Simplifies circuit design  
Reduces component count  
Reduces pick and place costs  
3. Applications  
Low current peripheral driver  
Control of IC inputs  
Replaces general-purpose transistors in digital applications  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Per transistor  
VCEO  
collector-emitter  
voltage  
open base  
-
-
50  
V
IO  
output current  
-
-
100  
13  
mA  
kΩ  
R1  
bias resistor 1 (input)  
bias resistor ratio  
[1]  
[1]  
7
10  
1
R2/R1  
0.8  
1.2  
[1] See "Section 11: Test information" for resistor calculation and test conditions.  
 
 
 
 
 

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