Datasheet > PUMD6H-Q

PUMD6H-Q

更新时间： 2023-09-03 20:33:35

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
14页	259K
描述
50 V, 100 mA NPN/PNP Resistor-Equipped double Transistor; R1 = 4.7 kΩ, R2 = openProduction

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PUMD6H-Q 数据手册

PUMD6H-Q

50 V, 100 mA NPN/PNP Resistor-Equipped double Transistor;

R1 = 4.7 kΩ, R2 = open

6 May 2021

Product data sheet

1. General description

NPN/PNP Resistor-Equipped double Transistor (RET) in a very small SOT363 (TSSOP6) Surface-

Mounted Device (SMD) plastic package.

NPN/NPN complement: PUMH7H-Q

PNP/PNP complement: PUMB3H-Q

2. Features and benefits

•

100 mA output current capability

Built-in resistors

•

Simplifies circuit design

Reduces component count

Reduces pick and place costs

High-temperature applications up to 175 °C

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Digital applications

Cost saving alternative for BC847 / BC857 series in digital applications

Controlling IC inputs

Switching loads

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor, for the PNP transistor with negative polarity

V_CEO

collector-emitter

voltage

open base

I_O

output current

bias resistor 1

100

6.1

kΩ

T_amb= 25 °C

[1]

3.3

4.7

[1] See section "Test information" for resistor calculation and test conditions

12 3 4 5 6 7...14

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