Datasheet > PUMD6-Q

PUMD6-Q

更新时间： 2024-04-09 19:01:09

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
14页	263K
描述
50 V, 100 mA NPN/PNP Resistor-Equipped Transistor; R1 = 4.7 kΩ, R2 = openProduction

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PUMD6-Q 数据手册

PUMD6-Q

50 V, 100 mA NPN/PNP Resistor-Equipped Transistor;

R1 = 4.7 kΩ, R2 = open

4 January 2024

Product data sheet

1. General description

NPN/PNP Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted

Device (SMD) plastic package.

2. Features and benefits

•

Built-in bias resistors

•

Simplifies circuit design

Reduces component count

Reduces pick and place costs

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Digital application in industrial segments

Switching loads

Low current peripheral driver

Controlling IC inputs

Cost-saving alternative to BC847 / BC857 series in digital applications

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

V_CEO

collector-emitter

voltage

open base

[1]

I_O

output current

[1]

[2]

100

6.1

kΩ

bias resistor 1 (input)

T_amb= 25 °C

3.3

4.7

[1] For the PNP transistor with negative polarity.

[2] See section "Test information" for resistor calculation and test conditions.

12 3 4 5 6 7...14

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