Datasheet > PUMD3/A2,165

PUMD3/A2,165

更新时间： 2024-02-05 07:55:46

品牌	Logo	应用领域
恩智浦 - NXP		晶体管
页数	文件大小	规格书
11页	306K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,SOT-363

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中文翻译

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技术参数
数据手册

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PUMD3/A2,165 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
最小直流电流增益 (hFE)：	30	元件数量：	2
极性/信道类型：	NPN/PNP	最大功率耗散 (Abs)：	0.2 W
子类别：	BIP General Purpose Small Signals	表面贴装：	YES
晶体管元件材料：	SILICON	Base Number Matches：	1

PUMD3/A2,165 数据手册

PEMD3; PIMD3; PUMD3

NPN/PNP resistor-equipped transistors;

R1 = 10 kΩ, R2 = 10 kΩ

Rev. 10 — 15 November 2009

Product data sheet

1. Product profile

1.1 General description

NPN/PNP Resistor-Equipped Transistors (RET).

Table 1. Product overview

Type number

Package

NXP

PNP/PNP

complement

NPN/NPN

complement

JEITA

PEMD3

PIMD3

PUMD3

SOT666

SOT457

SOT363

PEMB11

PEMH11

SC-74

SC-88

PUMB11

PUMH11

1.2 Features

Built-in bias resistors

Simplifies circuit design

Reduces component count

Reduces pick and place costs

1.3 Applications

Low current peripheral driver

Control of IC inputs

Replaces general-purpose transistors in digital applications

1.4 Quick reference data

Table 2.

Symbol

V_CEO

I_O

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

collector-emitter voltage

output current (DC)

bias resistor 1 (input)

bias resistor ratio

open base

100

kΩ

R2/R1

0.8

1.2

12 3 4 5 6 7...11

中文翻译

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