Datasheet > PUMD30

PUMD30

更新时间： 2023-09-03 20:31:33

品牌	Logo	应用领域
安世 - NEXPERIA		开关光电二极管晶体管
页数	文件大小	规格书
11页	234K
描述
50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 2.2 kΩ, R2 = openProduction

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中文翻译

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技术参数
数据手册

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PUMD30 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.77	最小直流电流增益 (hFE)：	30
元件数量：	2	极性/信道类型：	NPN/PNP
最大功率耗散 (Abs)：	0.3 W	子类别：	BIP General Purpose Small Signal
表面贴装：	YES	晶体管元件材料：	SILICON
Base Number Matches：	1

PUMD30 数据手册

PUMD30

50 V, 100 mA NPN/PNP resistor-equipped double transistor;

R1 = 2.2 kΩ, R2 = open

31 March 2023

Product data sheet

1. General description

NPN/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-

Mounted Device (SMD) plastic package.

NPN/NPN complement: PUMH30

PNP/PNP complement: PUMB30

2. Features and benefits

•

100 mA output current capability

•

Built-in bias resistors

Simplified circuit design

Reduces component count

Reduces pick and place costs

AEC-Q101 qualified

3. Applications

•

Low current peripheral driver

Cost-saving alternative for BC847BPN

Controlling IC inputs

Switching loads

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

V_CEO

collector-emitter

voltage

open base

[1]

I_O

output current

[1]

[2]

100

kΩ

bias resistor 1 (input)

1.54

2.2

2.86

[1] For the PNP transistor with negative polarity.

[2] See section "Test information" for resistor calculation and test conditions.

12 3 4 5 6 7...11

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