Datasheet > PUMB24-165

PUMB24-165

更新时间： 2024-02-09 05:52:35

品牌	Logo	应用领域
飞利浦 - PHILIPS		/
页数	文件大小	规格书
11页	66K
描述
Small Signal Bipolar Transistor, 0.02A I(C), 2-Element, PNP, Silicon,

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数据手册

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PUMB24-165 数据手册

PEMB24; PUMB24

Philips Semiconductors

PNP/PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ

7. Characteristics

Table 8:

Characteristics

T_amb= 25 °C unless otherwise speciﬁed.

Symbol Parameter Conditions

Per transistor

I_CBO

Min

Typ

Max

Unit

collector-base cut-off V_CB= −50 V; I_E= 0 A

−100

current

I_CEO

collector-emitter

cut-off current

V_CE= −30 V; I_B= 0 A

−1

µA

V_CE= −30 V; I_B= 0 A;

T_j= 150 °C

−50

I_EBO

emitter-base cut-off

current

V_EB= −5 V; I_C= 0 A

−50

µA

h_FE

DC current gain

V_CE= −5 V; I_C= −5 mA

V_CEsat

collector-emitter

I_C= −5 mA; I_B= −0.25 mA

−150

saturation voltage

V_I(off)

V_I(on)

off-state input voltage V_CE= −5 V; I_C= −100 µA

on-state input voltage V_CE= −0.3 V; I_C= −1 mA

bias resistor 1 (input)

−1.2

−1.6

100

−0.5

−3

0.8

130

1.2

2.5

kΩ

R2/R1

C_c

bias resistor ratio

collector capacitance V_CB= −10 V; I_E= i_e= 0 A;

f = 1 MHz

9397 750 14368

Product data sheet

Rev. 01 — 18 February 2005

4 of 11

1 2 345 6 7...11

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