是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-G6 | Reach Compliance Code: | compliant |
风险等级: | 5.75 | Is Samacsys: | N |
其他特性: | BUILT IN BIAS RESISTOR | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 50 V | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE): | 30 | JESD-30 代码: | R-PDSO-G6 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 2 | 端子数量: | 6 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | PNP | 表面贴装: | YES |
端子面层: | Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 30 |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
PUMB30,115 | NXP |
功能相似 |
PEMB30; PUMB30 - PNP/PNP double resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open TS |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PUMB30,115 | NXP |
获取价格 |
PEMB30; PUMB30 - PNP/PNP double resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open TS | |
PUMB30/T1 | NXP |
获取价格 |
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-88, 6 PI | |
PUMB30/T2 | NXP |
获取价格 |
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-88, 6 PI | |
PUMB3H-Q | NEXPERIA |
获取价格 |
50 V, 100 mA PNP/PNP Resistor-Equipped double | |
PUMB3T/R | NXP |
获取价格 |
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-88, 6 PI | |
PUMB4 | NXP |
获取价格 |
PNP resistor-equipped double transistor | |
PUMB4 | NEXPERIA |
获取价格 |
PNP/PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = openProduction | |
PUMB9 | NXP |
获取价格 |
PNP/PNP resistor-equipped transistors; R1 = 10 kW, R2 = 47 kW | |
PUMB9 | NEXPERIA |
获取价格 |
50 V, 100 mA PNP/PNP resistor-equipped double | |
PUMB9,115 | NXP |
获取价格 |
PEMB9; PUMB9 - PNP/PNP resistor-equipped tran |