Datasheet > PTZTE-176.2B

PTZTE-176.2B

更新时间： 2024-11-15 08:13:19

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
5页	83K
描述
Zener Diode, 6.2V V(Z), 6.06%, 1W, Silicon, Unidirectional, PMDS, 2 PIN

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PTZTE-176.2B 数据手册

PTZ Series

Diodes

Zener diode

PTZ Series

zExternal dimensions (Unit : mm)

zApplications

1) Voltage regulation and voltage limiting.

2) Voltage surge absorption.

1.5±0.2

CATHODE MARK

zFeatures

+0.02

−0.1

0.1

0∼0.1

1) Small surface mounting type. (PMDS)

2) 1W of power can be obtained despite compact size.

3) High surge withstand level.

2.0±0.2

2.6±0.2

ROHM : PMDS

EIAJ : −

JEDEC : SOD-106

Model name (voltage rank)

Date of manufacture Ex. 1999.12→9.C

zConstruction

Silicon epitaxial planar

zAbsolute maximum ratings (Ta=25°C)

Parameter

Symbol

Limits

Unit

∗

Power dissipation

Junction temperature

Storage temperature

150

°C

Tstg

−55 to +150

°C

∗ Mounting density of other power components should be taken into consideration when laying out the

pattern.

zMarking (Voltage rank)

Type No.

PTZ3.6B

Type No.

PTZ8.2B

Type No.

PTZ20B

3.6

3.9

4.3

4.7

5.1

5.6

6.2

6.8

7.5

8.2

9.1

PTZ3.9B

PTZ4.3B

PTZ4.7B

PTZ5.1B

PTZ5.6B

PTZ6.2B

PTZ6.8B

PTZ7.5B

(Ex.) PTZ3.6B

PTZ9.1B

PTZ10B

PTZ11B

PTZ12B

PTZ13B

PTZ15B

PTZ16B

PTZ18B

PTZ22B

PTZ24B

PTZ27B

PTZ30B

PTZ33B

PTZ36B

−

Zener voltage category

Year of manufacture: last

digit of Western calendar

Ex.) PTZ3.6B

1999

3.6B

Month Jan. Feb. Mar. Apr. May Jun. Jul. Aug. Sep. Oct. Nov. Dec.

Symbol

Dec.

Month of manufacture

Rev.A

1/4

12 3 4 5

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