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PTZTE-178.2B PDF预览

PTZTE-178.2B

更新时间: 2024-11-15 05:42:43
品牌 Logo 应用领域
罗姆 - ROHM /
页数 文件大小 规格书
5页 83K
描述
Zener Diode, 8.2V V(Z), 6.29%, 1W, Silicon, Unidirectional, PMDS, 2 PIN

PTZTE-178.2B 数据手册

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PTZ Series  
Diodes  
Zener diode  
PTZ Series  
zExternal dimensions (Unit : mm)  
zApplications  
1) Voltage regulation and voltage limiting.  
2) Voltage surge absorption.  
1.5±0.2  
CATHODE MARK  
zFeatures  
+0.02  
0.1  
0.1  
00.1  
1) Small surface mounting type. (PMDS)  
2) 1W of power can be obtained despite compact size.  
3) High surge withstand level.  
2.0±0.2  
2.6±0.2  
ROHM : PMDS  
EIAJ :   
JEDEC : SOD-106  
Model name (voltage rank)  
Date of manufacture Ex. 1999.129.C  
zConstruction  
Silicon epitaxial planar  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Symbol  
P
Limits  
1
Unit  
W
Power dissipation  
Junction temperature  
Storage temperature  
Tj  
150  
°C  
Tstg  
55 to +150  
°C  
Mounting density of other power components should be taken into consideration when laying out the  
pattern.  
zMarking (Voltage rank)  
Type No.  
PTZ3.6B  
Type No.  
PTZ8.2B  
Type No.  
PTZ20B  
3.6  
3.9  
4.3  
4.7  
5.1  
5.6  
6.2  
6.8  
7.5  
B
B
B
B
B
B
B
B
B
8.2  
9.1  
10  
11  
12  
13  
15  
16  
18  
B
B
B
B
B
B
B
B
B
20  
B
B
B
B
B
B
B
PTZ3.9B  
PTZ4.3B  
PTZ4.7B  
PTZ5.1B  
PTZ5.6B  
PTZ6.2B  
PTZ6.8B  
PTZ7.5B  
(Ex.) PTZ3.6B  
PTZ9.1B  
PTZ10B  
PTZ11B  
PTZ12B  
PTZ13B  
PTZ15B  
PTZ16B  
PTZ18B  
PTZ22B  
PTZ24B  
PTZ27B  
PTZ30B  
PTZ33B  
PTZ36B  
22  
24  
27  
30  
33  
36  
Zener voltage category  
Year of manufacture: last  
digit of Western calendar  
Ex.) PTZ3.6B  
1999  
3.6B  
Month Jan. Feb. Mar. Apr. May Jun. Jul. Aug. Sep. Oct. Nov. Dec.  
Symbol  
9
C
Dec.  
1
2
3
4
5
6
7
8
9
O
A
C
Month of manufacture  
Rev.A  
1/4  

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