ECO-PACTM 2
PSHI 50/12*
IGBT Module
IC25
= 49 A
Preliminary Data Sheet
VCES
= 1200 V
VCE(sat)typ. = 3.1 V
F10
A1
K10
K13
H13
S18
P18
N9
PSHI 50/12*
NTC
*NTC optional
IGBTs
Features
Symbol
VCES
Conditions
Maximum Ratings
1200
•
•
•
•
•
Package with DCB ceramic base plate
TVJ = 25°C to 150°C
V
Isolation voltage 3000 V
Planar glass passivated chips
Low forward voltage drop
Leads suitable for PC board
soldering
±
VGES
20
V
IC25
IC80
TC = 25°C
TC = 80°C
49
33
A
A
ICM
VGE = ±15 V; RG = 47 Ω; TVJ = 125°C
50
A
µs
W
•
UL registered, E 148688
VCEK
RBSOA, Clamped inductive load; L = 100 µH
VCES
10
Applications
tSC
VCE = VCES; VGE = ±15 V; RG = 47 Ω; TVJ = 125°C
•
•
•
AC motor control
AC servo and robot drives
power supplies
(SCSOA)
non-repetitive
Ptot
TC = 25°C
208
Advantages
Symbol
Conditions
Characteristic Values
•
•
•
Easy to mount with two screws
(TVJ = 25°C, unless otherwise specified)
Space and weight savings
Improved temperature and power
cycling capability
min.
typ. max.
VCE(sat)
IC = 50 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
3.1
3.5
3.7
V
V
•
•
High power density
VGE(th)
ICES
IC = 1 mA; VGE = VCE
4.5
6.5
V
Small and light weight
VCE = VCES
;
VGE = 0 V; TVJ = 25°C
TVJ = 125°C
1.1 mA
4.2 mA
±
IGES
VCE = 0 V; VGE
=
20 V
180 nA
t
100
70
ns
ns
td(on)
Inductive load, TVJ = 125°C
VCE = 600 V; I = 30 A
tr
500
70
ns
VGE = 15/0 V; CRG = 47 Ω
tdf (off)
Eon
Eoff
ns
4.6
3.4
mJ
mJ
Caution: These Devices are sensitive
to electrostatic discharge. Users
should observe proper ESD handling
precautions.
Cies
VCE = 25 V; VGE = 0 V; f = 1 MHz
1.65
nF
RthJC
RthJH
(per IGBT)
0.6 K/W
K/W
with heatsink compound (0.42 K/m.K; 50 µm)
1.2
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20