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PSHI50/12 PDF预览

PSHI50/12

更新时间: 2024-11-25 06:05:35
品牌 Logo 应用领域
POWERSEM 双极性晶体管
页数 文件大小 规格书
4页 132K
描述
IGBT Module

PSHI50/12 数据手册

 浏览型号PSHI50/12的Datasheet PDF文件第2页浏览型号PSHI50/12的Datasheet PDF文件第3页浏览型号PSHI50/12的Datasheet PDF文件第4页 
ECO-PACTM 2  
PSHI 50/12*  
IGBT Module  
IC25  
= 49 A  
Preliminary Data Sheet  
VCES  
= 1200 V  
VCE(sat)typ. = 3.1 V  
F10  
A1  
K10  
K13  
H13  
S18  
P18  
N9  
PSHI 50/12*  
NTC  
*NTC optional  
IGBTs  
Features  
Symbol  
VCES  
Conditions  
Maximum Ratings  
1200  
Package with DCB ceramic base plate  
TVJ = 25°C to 150°C  
V
Isolation voltage 3000 V  
Planar glass passivated chips  
Low forward voltage drop  
Leads suitable for PC board  
soldering  
±
VGES  
20  
V
IC25  
IC80  
TC = 25°C  
TC = 80°C  
49  
33  
A
A
ICM  
VGE = ±15 V; RG = 47 ; TVJ = 125°C  
50  
A
µs  
W
UL registered, E 148688  
VCEK  
RBSOA, Clamped inductive load; L = 100 µH  
VCES  
10  
Applications  
tSC  
VCE = VCES; VGE = ±15 V; RG = 47 ; TVJ = 125°C  
AC motor control  
AC servo and robot drives  
power supplies  
(SCSOA)  
non-repetitive  
Ptot  
TC = 25°C  
208  
Advantages  
Symbol  
Conditions  
Characteristic Values  
Easy to mount with two screws  
(TVJ = 25°C, unless otherwise specified)  
Space and weight savings  
Improved temperature and power  
cycling capability  
min.  
typ. max.  
VCE(sat)  
IC = 50 A; VGE = 15 V; TVJ = 25°C  
TVJ = 125°C  
3.1  
3.5  
3.7  
V
V
High power density  
VGE(th)  
ICES  
IC = 1 mA; VGE = VCE  
4.5  
6.5  
V
Small and light weight  
VCE = VCES  
;
VGE = 0 V; TVJ = 25°C  
TVJ = 125°C  
1.1 mA  
4.2 mA  
±
IGES  
VCE = 0 V; VGE  
=
20 V  
180 nA  
t
100  
70  
ns  
ns  
td(on)  
Inductive load, TVJ = 125°C  
VCE = 600 V; I = 30 A  
tr  
500  
70  
ns  
VGE = 15/0 V; CRG = 47 Ω  
tdf (off)  
Eon  
Eoff  
ns  
4.6  
3.4  
mJ  
mJ  
Caution: These Devices are sensitive  
to electrostatic discharge. Users  
should observe proper ESD handling  
precautions.  
Cies  
VCE = 25 V; VGE = 0 V; f = 1 MHz  
1.65  
nF  
RthJC  
RthJH  
(per IGBT)  
0.6 K/W  
K/W  
with heatsink compound (0.42 K/m.K; 50 µm)  
1.2  
2002 POWERSEM reserves the right to change limits, test conditions and dimensions  
POWERSEM GmbH, Walpersdorfer Str. 53  
D - 91126 Schwabach  
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  

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