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PN4356/J18Z PDF预览

PN4356/J18Z

更新时间: 2024-11-29 19:54:51
品牌 Logo 应用领域
德州仪器 - TI 晶体管
页数 文件大小 规格书
2页 54K
描述
PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92

PN4356/J18Z 技术参数

生命周期:Obsolete包装说明:CYLINDRICAL, O-PBCY-T3
Reach Compliance Code:unknown风险等级:5.65
配置:SINGLE最小直流电流增益 (hFE):30
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
最大关闭时间(toff):400 nsBase Number Matches:1

PN4356/J18Z 数据手册

 浏览型号PN4356/J18Z的Datasheet PDF文件第2页 

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Small Signal Bipolar Transistor, 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92-18F,
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Small Signal Bipolar Transistor, 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92-18F,
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Small Signal Bipolar Transistor, 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92-18R,
PN4356-18RLEADFREE CENTRAL

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Small Signal Bipolar Transistor, 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92-18R,
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Small Signal Bipolar Transistor, 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92-5F, 3
PN4356-5T1 CENTRAL

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Small Signal Bipolar Transistor, 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92-5T1,
PN4356APM CENTRAL

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Small Signal Bipolar Transistor, 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,
PN4356APP CENTRAL

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Small Signal Bipolar Transistor, 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,
PN4356APPLEADFREE CENTRAL

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Small Signal Bipolar Transistor, 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,