Datasheet > PN4356_D81Z

PN4356_D81Z

更新时间： 2024-12-01 08:21:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	529K
描述
Transistor,

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PN4356_D81Z 数据手册

PN4356

TO-92

PNP General Purpose Amplifier

This device is designed for use as general purpose amplifiers

and switches requiring collector currents to 500 mA. Sourced

from Process 67. See TN4033A for characteristics.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CES

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

5.0

Collector Current - Continuous

Operating and Storage Junction Temperature Range

800

-55 to +150

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

3) All voltages (V) and currents (A) are negative polarity for PNP transistors.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

PN4356

P_D

Total Device Dissipation

Derate above 25 C

625

5.0

mW/ C

Thermal Resistance, Junction to Case

83.3

R_θ

C/W

Thermal Resistance, Junction to Ambient

200

R_θ

C/W

1997 Fairchild Semiconductor Corporation

12 3 4 5 6 7

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