Datasheet > PN4356-J25Z

PN4356-J25Z

更新时间： 2024-12-01 08:19:47

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	529K
描述
Transistor

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中文翻译

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技术参数
数据手册

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PN4356-J25Z 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.92	最大集电极电流 (IC)：	0.5 A
配置：	Single	最小直流电流增益 (hFE)：	25
JESD-609代码：	e0	最高工作温度：	150 °C
极性/信道类型：	PNP	最大功率耗散 (Abs)：	0.6 W
子类别：	Other Transistors	表面贴装：	NO
端子面层：	Tin/Lead (Sn/Pb)	标称过渡频率 (fT)：	100 MHz
Base Number Matches：	1

PN4356-J25Z 数据手册

PN4356

TO-92

PNP General Purpose Amplifier

This device is designed for use as general purpose amplifiers

and switches requiring collector currents to 500 mA. Sourced

from Process 67. See TN4033A for characteristics.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CES

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

5.0

Collector Current - Continuous

Operating and Storage Junction Temperature Range

800

-55 to +150

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

3) All voltages (V) and currents (A) are negative polarity for PNP transistors.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

PN4356

P_D

Total Device Dissipation

Derate above 25 C

625

5.0

mW/ C

Thermal Resistance, Junction to Case

83.3

R_θ

C/W

Thermal Resistance, Junction to Ambient

200

R_θ

C/W

1997 Fairchild Semiconductor Corporation

12 3 4 5 6 7

中文翻译

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