Datasheet > PN4391

PN4391

更新时间： 2024-11-04 12:56:39

品牌	Logo	应用领域
MICROSS		晶体晶体管开关
页数	文件大小	规格书
1页	290K
描述
Linear Systems replaces discontinued Siliconix PN4391

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

PN4391 数据手册

PN4391

Single N-Channel JFET switch

Linear Systems replaces discontinued Siliconix PN4391

FEATURES

The PN4391 features many of the superior

DIRECT REPLACEMENT FOR SILICONIX PN4391

LOW ON RESISTANCE

characteristics of JFETs which make it a good choice

for demanding analog switching applications and for

specialized amplifier circuits.

r_DS(on)≤ 30Ω

I_D(off)= 5pA

t_(ON)≤= 15ns

LOW GATE OPERATING CURRENT

FAST SWITCHING

PN4391 Benefits:

ABSOLUTE MAXIMUM RATINGS¹@ 25°C (unless otherwise noted)

Low Error Voltage

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

Maximum Power Dissipation

Continuous Power Dissipation

MAXIMUM CURRENT

Gate Current (Note 1)

MAXIMUM VOLTAGES

Gate to Drain Voltage / Gate to Source Voltage

High-Speed Analog Circuit Performance

Negligible “Off-Error,” Excellent Accuracy

Good Frequency Response, Low Glitches

Eliminates Additional Buffering

‐65°C to +200°C

‐55°C to +200°C

350mW

PN4391 Applications:

Analog Switches

Choppers, Sample-and-Hold

Normally “On” Switches, Current Limiters

I_G= 50mA

‐40V

PN4391 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

BV_GSS

V_GS(off)

V_GS(F)

V_DS(on)

I_DSS

CHARACTERISTIC

Gate to Source Breakdown Voltage

Gate to Source Cutoff Voltage

Gate to Source Forward Voltage

Drain to Source On Voltage

Drain to Source Saturation Current²

Gate Reverse Current

MIN

‐40

‐4

‐‐

TYP.

‐‐

0.7

0.25

0.3

0.35

‐‐

MAX

‐‐

‐10

‐‐

0.4

100

‐1000

‐‐

UNITS

CONDITIONS

I_G= ‐1µA, V_DS= 0V

V_DS= 20V, I_D= 1nA

I_G= 1mA, V_DS= 0V

V_GS= 0V, I_D= 3mA

V_GS= 0V, I_D= 6mA

V_GS= 0V, I_D= 12mA

V_DS= 20V, V_GS= 0V

V_GS= ‐20V, V_DS= 0V

V_DG= 15V, I_D= 10mA

I_GSS

I_G

‐5

Gate Operating Current

‐‐

V_DS= 20V, V_GS= ‐5V

I_D(off)

Drain Cutoff Current

‐‐

1000

V_DS= 20V, V_GS= ‐7V

V_DS= 20V, V_GS= ‐12V

V_GS= 0V, I_D= 1mA

r_DS(on)

Drain to Source On Resistance

PN4391 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

CHARACTERISTIC

TYP

MIN

MAX

UNITS

CONDITIONS

Click To Buy

g_fs

Forward Transconductance

‐‐

µS

V_DS= 20V, I_D= 1mA, f = 1kHz

V_GS= 0V, I_D= 0A, f = 1kHz

g_os

Output Conductance

‐‐

r_ds(on)

C_iss

Drain to Source On Resistance

Input Capacitance

‐‐

3.5

3.4

V_DS= 20V, V_GS= 0V, f = 1MHz

V_DS= 0V, V_GS= ‐5V, f = 1MHz

V_DS= 0V, V_GS= ‐7V, f = 1MHz

V_DS= 0V, V_GS= ‐12V, f = 1MHz

V_DS= 10V, I_D= 10mA, f = 1kHz

C_rss

Reverse Transfer Capacitance

C_rss

‐‐

C_rss

e_n

Equivalent Input Noise Voltage

‐‐

nV/√Hz

PN4391 SWITCHING ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

t_d(on)

t_r

CHARACTERISTIC

TYP

MIN

‐‐

MAX

UNITS

CONDITIONS

Turn On Time

‐‐

V_DD= 10V, V_GS(H)= 0V

t_d(off)

t_f

‐‐

Turn Off Time

‐‐

Notes: 1. Absolute ratings are limiting values above which serviceability may be impaired

2. Pulse test: PW ≤ 300µs, Duty Cycle ≤ 3%

PN4391 SWITCHING CIRCUIT PARAMETERS

SWITCHING CIRCUIT

V_GS(L)

R_L

‐12V

800Ω

12mA

TO-92 (Bottom View)

Micross Components Europe

I_D(on)

Available Packages:

Tel: +44 1603 788967

Email: chipcomponents@micross.com

Web: http://www.micross.com/distribution

PN4391 in TO-92

PN4391 in bare die.

Contact Micross for full package and die dimensions

Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or

other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.

中文翻译

下载PDF

与PN4391相关器件

型号	品牌	获取价格	描述	数据表
PN4391(TO-92)	MICROSS	获取价格	Transistor
PN4391/D10Z-18	TI	获取价格	N-CHANNEL, Si, SMALL SIGNAL, JFET, PLASTIC PACKAGE-3
PN4391/D10Z-J22Z	TI	获取价格	N-CHANNEL, Si, SMALL SIGNAL, JFET, PLASTIC PACKAGE-3
PN4391/D10Z-J61Z	TI	获取价格	N-CHANNEL, Si, SMALL SIGNAL, JFET, PLASTIC PACKAGE-3
PN4391/D11Z-J22Z	TI	获取价格	N-CHANNEL, Si, SMALL SIGNAL, JFET, PLASTIC PACKAGE-3
PN4391/D11Z-J25Z	TI	获取价格	N-CHANNEL, Si, SMALL SIGNAL, JFET, PLASTIC PACKAGE-3
PN4391/D26Z	TI	获取价格	N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
PN4391/D26Z-18	TI	获取价格	N-CHANNEL, Si, SMALL SIGNAL, JFET, PLASTIC PACKAGE-3
PN4391/D26Z-5	TI	获取价格	N-CHANNEL, Si, SMALL SIGNAL, JFET, PLASTIC PACKAGE-3
PN4391/D26Z-J14Z	TI	获取价格	N-CHANNEL, Si, SMALL SIGNAL, JFET, PLASTIC PACKAGE-3

与PN4391相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

13
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

7
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

34
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

30

产品中心

服务支持

精选活动

关于我们

帮助中心

PN4391

PN4391 数据手册

与PN4391相关器件

与PN4391相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

PN4391

PN4391 数据手册

与PN4391相关器件

与PN4391相关文章

您还可以找

您在本页遇到什么问题？