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PN100D27Z PDF预览

PN100D27Z

更新时间: 2024-09-18 15:48:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器晶体管
页数 文件大小 规格书
12页 503K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

PN100D27Z 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:CYLINDRICAL, O-PBCY-T3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.51最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):100JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:NPN最大功率耗散 (Abs):0.625 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzBase Number Matches:1

PN100D27Z 数据手册

 浏览型号PN100D27Z的Datasheet PDF文件第2页浏览型号PN100D27Z的Datasheet PDF文件第3页浏览型号PN100D27Z的Datasheet PDF文件第4页浏览型号PN100D27Z的Datasheet PDF文件第5页浏览型号PN100D27Z的Datasheet PDF文件第6页浏览型号PN100D27Z的Datasheet PDF文件第7页 
PN100  
MMBT100  
PN100A  
MMBT100A  
C
E
TO-92  
C
B
B
SOT-23  
Mark: NA / NA1  
E
NPN General Purpose Amplifier  
This device is designed for general purpose amplifier applications  
at collector currents to 300 mA. Sourced from Process 10.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
45  
75  
V
V
Collector-Base Voltage  
Emitter-Base Voltage  
6.0  
V
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
500  
mA  
-55 to +150  
TJ, Tstg  
°
C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
PN100  
*MMBT100  
PN100A  
*MMBT100A  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
625  
5.0  
83.3  
350  
2.8  
mW  
mW/°C  
°C/W  
RθJC  
RθJA  
Thermal Resistance, Junction to Ambient  
200  
357  
°C/W  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
1998 Fairchild Semiconductor Corporation  

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