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PMST4403 PDF预览

PMST4403

更新时间: 2024-11-08 11:13:39
品牌 Logo 应用领域
安世 - NEXPERIA 开关光电二极管晶体管
页数 文件大小 规格书
13页 810K
描述
40 V, 600 mA PNP switching transistorProduction

PMST4403 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
风险等级:5.73Is Samacsys:N
最大集电极电流 (IC):0.6 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):20
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
最大关闭时间(toff):350 ns最大开启时间(吨):40 ns
Base Number Matches:1

PMST4403 数据手册

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PMST4403  
40 V, 600 mA PNP switching transistor  
1 August 2016  
Product data sheet  
1. General description  
PNP switching transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic  
package.  
NPN complement: PMST4401  
2. Features and benefits  
General purpose switching transistor  
AEC-Q101 qualified  
3. Applications  
Switching and linear amplification.  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VCEO  
collector-emitter  
voltage  
open base  
-
-
-40  
V
IC  
collector current  
DC current gain  
-
-
-
-600  
300  
mA  
hFE  
VCE = -2 V; IC = -150 mA; pulsed; tp ≤  
300 µs; δ ≤ 0.02 ; Tamb = 25 °C  
100  
5. Pinning information  
Table 2. Pinning information  
Pin  
1
Symbol Description  
Simplified outline  
Graphic symbol  
3
B
E
C
base  
C
E
2
emitter  
collector  
B
3
sym132  
1
2
SC-70 (SOT323)  
 
 
 
 
 

PMST4403 替代型号

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