Datasheet > PMN48XP,125

PMN48XP,125

更新时间： 2024-11-25 22:57:59

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
15页	1109K
描述
MOSFET P-CH 20V 4.1A SC-74

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PMN48XP,125 数据手册

PMN48XP

20 V, 4.1 A P-channel Trench MOSFET

Rev. 1 — 21 April 2011

Product data sheet

1. Product profile

1.1 General description

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)

Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

1.2 Features and benefits

 Low R_DSon

 Trench MOSFET technology

 Very fast switching

1.3 Applications

 Relay driver

 High-side loadswitch

 Switching circuits

 High-speed line driver

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min

Typ

Max

-20

Unit

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

V_GS

-12

[1]

I_D

V_GS= -4.5 V; T_amb= 25 °C

-4.1

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= -4.5 V; I_D= -2.4 A; T_j= 25 °C

mΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm².

2. Pinning information

Table 2.

Pinning information

Symbol Description

Simplified outline

Graphic symbol

drain

gate

source

drain

SOT457 (TSOP6)

017aaa094

12 3 4 5 6 7...15

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