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PMEG4010AESB PDF预览

PMEG4010AESB

更新时间: 2024-11-07 11:12:43
品牌 Logo 应用领域
安世 - NEXPERIA 二极管
页数 文件大小 规格书
14页 695K
描述
40 V, 1 A low VF MEGA Schottky barrier rectifierProduction

PMEG4010AESB 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:DSN1006-2, 2 PINReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.47
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PBCC-N2
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):260最大功率耗散:0.525 W
参考标准:IEC-60134最大重复峰值反向电压:40 V
最大反向恢复时间:0.0031 µs表面贴装:YES
技术:SCHOTTKY端子形式:NO LEAD
端子位置:BOTTOM处于峰值回流温度下的最长时间:30
Base Number Matches:1

PMEG4010AESB 数据手册

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PMEG4010AESB  
40 V, 1 A low VF MEGA Schottky barrier rectifier  
6 October 2015  
Product data sheet  
1. General description  
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an  
integrated guard ring for stress protection in a leadless ultra small DSN1006-2 (SOD993)  
Surface-Mounted Device (SMD) package.  
2. Features and benefits  
Average forward current: IF(AV) ≤ 1 A  
Reverse voltage: VR ≤ 40 V  
Low forward voltage, typical: VF = 435 mV  
Low reverse current, typical: IR = 325 µA  
Package height typ. 270 µm  
3. Applications  
Low voltage rectification  
High efficiency DC-to-DC conversion  
Switch mode power supply  
Low power consumption applications  
Ultra high-speed switching  
LED backlight for mobile application  
4. Quick reference data  
Table 1.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
IF(AV)  
average forward  
current  
δ = 0.5 ; f = 20 kHz; Tsp ≤ 145 °C;  
square wave  
-
-
1
A
VR  
VF  
reverse voltage  
forward voltage  
Tj = 25 °C  
-
-
-
40  
V
IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02 ;  
Tj = 25 °C  
435  
505  
mV  
IR  
reverse current  
VR = 20 V; tp ≤ 3 ms; δ ≤ 0.3 ;  
Tj = 25 °C  
-
-
30  
115  
µA  
VR = 40 V; tp ≤ 3 ms; δ ≤ 0.3 ;  
Tj = 25 °C  
325  
1250 µA  
 
 
 
 

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