Datasheet > PMEG4010CPAS

PMEG4010CPAS

更新时间： 2024-11-10 11:14:31

品牌	Logo	应用领域
安世 - NEXPERIA		二极管
页数	文件大小	规格书
15页	705K
描述
40 V, 1 A low VF dual MEGA Schottky barrier rectifierProduction

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PMEG4010CPAS 数据手册

PMEG4010CPAS

40 V, 1 A low VF dual MEGA Schottky barrier rectifier

6 October 2015

Product data sheet

1. General description

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier in

common cathode configuration with an integrated guard ring for stress protection,

encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted

Device (SMD) plastic package with visible and solderable side pads.

2. Features and benefits

Average forward current I_F(AV)≤ 1 A

•

Reverse voltage V_R≤ 40 V

Low forward voltage V_F≤ 500 mV

Low reverse current

Reduced Printed-Circuit-Board (PCB) area requirements

Exposed heat sink (cathode pad) for excellent thermal and electrical conductivity

Leadless small SMD plastic package with visible and solderable side pads

Suitable for Automatic Optical Inspection (AOI) of solder joints

AEC-Q101 qualified

3. Applications

Low voltage rectification

•

High efficiency DC-to-DC conversion

Switch Mode Power Supply (SMPS)

Free-wheeling application

Reverse polarity protection

Low power consumption application

Battery chargers for mobile equipment

LED backlight for mobile application

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

Per diode

I_F(AV)

average forward

current

δ = 0.5 ; f = 20 kHz; T_amb≤ 110 °C;

square wave

[1]

δ = 0.5 ; f = 20 kHz; T_sp≤ 140 °C;

square wave

12 3 4 5 6 7...15

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