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PMEG4010CEH PDF预览

PMEG4010CEH

更新时间: 2024-11-06 11:56:59
品牌 Logo 应用领域
恩智浦 - NXP 整流二极管光电二极管PC
页数 文件大小 规格书
10页 107K
描述
1 A very low VF MEGA Schottky barrier rectifiers

PMEG4010CEH 技术参数

Source Url Status Check Date:2013-06-14 00:00:00是否无铅:不含铅
是否Rohs认证:符合生命周期:Transferred
包装说明:PLASTIC PACKAGE-2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.33
Is Samacsys:N配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.24 VJESD-30 代码:R-PDSO-F2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:9 A元件数量:1
端子数量:2最高工作温度:150 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:40 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Tin (Sn)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:30
Base Number Matches:1

PMEG4010CEH 数据手册

 浏览型号PMEG4010CEH的Datasheet PDF文件第2页浏览型号PMEG4010CEH的Datasheet PDF文件第3页浏览型号PMEG4010CEH的Datasheet PDF文件第4页浏览型号PMEG4010CEH的Datasheet PDF文件第5页浏览型号PMEG4010CEH的Datasheet PDF文件第6页浏览型号PMEG4010CEH的Datasheet PDF文件第7页 
PMEG4010CEH; PMEG4010CEJ  
1 A very low VF MEGA Schottky barrier rectifiers  
Rev. 02 — 22 March 2007  
Product data sheet  
1. Product profile  
1.1 General description  
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an  
integrated guard ring for stress protection, encapsulated in small and flat lead  
Surface-Mounted Device (SMD) plastic packages.  
Table 1.  
Product overview  
Type number  
Package  
NXP  
Configuration  
JEITA  
-
PMEG4010CEH  
PMEG4010CEJ  
SOD123F  
SOD323F  
single  
single  
SC-90  
1.2 Features  
I Forward current: IF 1 A  
I Reverse voltage: VR 40 V  
I Very low forward voltage  
I Small and flat lead SMD plastic packages  
1.3 Applications  
I Low voltage rectification  
I High efficiency DC-to-DC conversion  
I Switch mode power supply  
I Reverse polarity protection  
I Low power consumption applications  
1.4 Quick reference data  
Table 2.  
Symbol  
IF  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
1
Unit  
A
forward current  
reverse voltage  
forward voltage  
Tsp 55 °C  
-
-
-
-
VR  
-
40  
V
[1]  
VF  
IF = 1 A  
490  
570  
mV  
[1] Pulse test: tp 300 µs; δ ≤ 0.02.  

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