Datasheet > PMEG200G10ELR

PMEG200G10ELR

更新时间： 2023-09-03 20:37:48

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
14页	251K
描述
200 V, 1 A Silicon Germanium (SiGe) rectifierProduction

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PMEG200G10ELR 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.76	Base Number Matches：	1

PMEG200G10ELR 数据手册

PMEG200G10ELR

200 V, 1 A Silicon Germanium (SiGe) rectifier

28 July 2020

Product data sheet

1. General description

Silicon Germanium (SiGe) rectifier encapsulated in a CFP3 (SOD123W) small and flat lead

Surface-Mounted Device (SMD) plastic package.

2. Features and benefits

Features

Benefits

•

Low forward voltage and low Q_rr

•

Excellent efficiency

Extraordinary safe operating area

Minimal impact on Electro-Magnetic Compatibility (EMC)

allowing simplified certification

Extremely low leakage current

Thermal stability up to 175 °C junction temperature

Fast and smooth switching

Low parasitic capacitance

AEC-Q101 qualified

3. Applications

•

High-efficiency power conversion

•

Automotive LED lighting

Engine control unit

Server power supply

Base station power supply

•

Reverse polarity protection

OR-ing

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

I_F(AV)

average forward

current

δ = 0.5; square wave; f = 20 kHz; T_sp

167 °C

≤

V_R

V_F

I_R

reverse voltage

forward voltage

reverse current

T_j= 25 °C

200

880

I_F= 1 A; T_j= 25 °C; pulsed

V_R= 200 V; T_j= 25 °C; pulsed

V_R= 200 V; T_j= 150 °C; pulsed

[1]

805

0.2

µA

150

[1] Very short pulse, in order to maintain a stable junction temperature.

12 3 4 5 6 7...14

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