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PMEG2005ELD

更新时间: 2024-09-27 10:07:35
品牌 Logo 应用领域
恩智浦 - NXP 整流二极管光电二极管
页数 文件大小 规格书
14页 785K
描述
20 V, 0.5 A low VF MEGA Schottky barrier rectifier Low reverse current

PMEG2005ELD 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:DFN包装说明:1 X 0.60 MM, 0.40 MM HEIGHT, LEADLESS, ULTRA SMALL, PLASTIC PACKAGE-2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.61
Is Samacsys:N二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-N2JESD-609代码:e3
湿度敏感等级:1端子数量:2
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified表面贴装:YES
端子面层:TIN端子形式:NO LEAD
端子位置:DUAL处于峰值回流温度下的最长时间:30
Base Number Matches:1

PMEG2005ELD 数据手册

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PMEG2005ELD  
20 V, 0.5 A low VF MEGA Schottky barrier rectifier  
Rev. 1 — 4 May 2011  
Product data sheet  
1. Product profile  
1.1 General description  
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an  
integrated guard ring for stress protection, encapsulated in a SOD882D leadless ultra  
small Surface-Mounted Device (SMD) plastic package with visible and solderable side  
pads.  
1.2 Features and benefits  
„ Forward current: IF 0.5 A  
„ Reverse voltage: VR 20 V  
„ Low forward voltage: VF 500 mV  
„ Low reverse current  
„ AEC-Q101 qualified  
„ Solderable side pads  
„ Package height typ. 0.37 mm  
„ Ultra small and leadless SMD plastic  
package  
1.3 Applications  
„ Low voltage rectification  
„ High efficiency DC-to-DC conversion  
„ Switch Mode Power Supply (SMPS)  
„ Reverse polarity protection  
„ Low power consumption applications  
„ Ultra high-speed switching  
1.4 Quick reference data  
Table 1.  
Quick reference data  
Symbol Parameter  
Conditions  
Min  
Typ  
Max Unit  
IF(AV)  
average forward  
current  
square wave; δ = 0.5; f = 20 kHz  
Tamb 85 °C  
[1]  
[2]  
-
-
-
-
-
-
0.5  
0.5  
30  
A
Tsp 130 °C  
-
A
IR  
reverse current  
reverse voltage  
forward voltage  
VR = 10 V  
5
μA  
V
VR  
VF  
-
20  
IF = 500 mA  
450  
500  
mV  
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for  
cathode 1 cm2.  
[2] Pulse test: tp 300 μs; δ ≤ 0.02.  

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