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PMBTA55TRL PDF预览

PMBTA55TRL

更新时间: 2024-11-14 14:36:35
品牌 Logo 应用领域
恩智浦 - NXP 光电二极管晶体管
页数 文件大小 规格书
1页 65K
描述
TRANSISTOR 500 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

PMBTA55TRL 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.78Is Samacsys:N
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):50
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管元件材料:SILICON
标称过渡频率 (fT):50 MHzVCEsat-Max:0.25 V
Base Number Matches:1

PMBTA55TRL 数据手册

  

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Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon