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PMBTA55TRL13 PDF预览

PMBTA55TRL13

更新时间: 2024-11-15 05:10:19
品牌 Logo 应用领域
恩智浦 - NXP 光电二极管晶体管
页数 文件大小 规格书
1页 61K
描述
TRANSISTOR 500 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

PMBTA55TRL13 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.78最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):50JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz
VCEsat-Max:0.25 VBase Number Matches:1

PMBTA55TRL13 数据手册

  

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