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PMBTA44 PDF预览

PMBTA44

更新时间: 2024-11-14 10:07:43
品牌 Logo 应用领域
恩智浦 - NXP 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
12页 97K
描述
400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor

PMBTA44 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOT-23
包装说明:PLASTIC, SMD, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.73Is Samacsys:N
最大集电极电流 (IC):0.3 A集电极-发射极最大电压:400 V
配置:SINGLE最小直流电流增益 (hFE):40
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):0.25 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):20 MHzBase Number Matches:1

PMBTA44 数据手册

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PMBTA44  
400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor  
Rev. 01 — 22 February 2008  
Product data sheet  
1. Product profile  
1.1 General description  
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a  
SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.  
1.2 Features  
I Low current (max. 300 mA)  
I High voltage (max. 400 V)  
I AEC-Q101 qualified  
1.3 Applications  
I LED driver for LED chain module  
I LCD backlighting  
I High Intensity Discharge (HID) front lighting  
I Automotive motor management  
I Hook switch for wired telecom  
I Switch mode power supply  
1.4 Quick reference data  
Table 1.  
Quick reference data  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
400  
300  
200  
Unit  
V
VCEO  
IC  
collector-emitter voltage open base  
collector current  
-
-
-
-
-
mA  
hFE  
DC current gain  
VCE = 10 V; IC = 10 mA  
50  

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