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PMBFJ620,115 PDF预览

PMBFJ620,115

更新时间: 2024-11-28 19:45:47
品牌 Logo 应用领域
恩智浦 - NXP 放大器光电二极管晶体管
页数 文件大小 规格书
14页 235K
描述
PMBFJ620 - Dual N-channel FET TSSOP 6-Pin

PMBFJ620,115 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TSSOP包装说明:PLASTIC, SC-88, 6 PIN
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.74其他特性:LOW NOISE
配置:SEPARATE, 2 ELEMENTS最小漏源击穿电压:25 V
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):2.5 pF
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
元件数量:2端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.19 W
认证状态:Not Qualified子类别:FET General Purpose Small Signal
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

PMBFJ620,115 数据手册

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PMBFJ620  
Dual N-channel field-effect transistor  
Rev. 3 — 6 March 2014  
Product data sheet  
1. Product profile  
1.1 General description  
Two N-channel symmetrical junction field-effect transistors in a SOT363 package.  
CAUTION  
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling  
electrostatic sensitive devices.  
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or  
equivalent standards.  
1.2 Features and benefits  
Two field effect transistors in a single package  
Low noise  
Interchangeability of drain and source connections  
High gain.  
1.3 Applications  
AM input stage in car radios  
VHF amplifiers  
Oscillators and mixers.  
1.4 Quick reference data  
Table 1.  
Quick reference data  
Symbol Parameter  
Per FET  
Conditions  
Min  
Typ  
Max  
Unit  
VDS  
drain-source voltage  
-
-
-
25  
V
V
VGSoff  
gate-source cut-off  
voltage  
VDS = 10 V; ID = 1 A  
2  
6.5  
IDSS  
Ptot  
drain current  
VGS = 0 V; VDS = 10 V  
24  
-
-
-
60  
mA  
total power  
dissipation  
Ts 90 C  
190  
mW  
yfs  
forward transfer  
admittance  
VDS = 10 V;  
ID = 10 mA  
10  
-
-
mS  
 
 
 
 
 

PMBFJ620,115 替代型号

型号 品牌 替代类型 描述 数据表
PMBFJ620 NXP

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Dual N-channel field-effect transistor

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