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PMBFJ110-T PDF预览

PMBFJ110-T

更新时间: 2024-11-15 19:55:15
品牌 Logo 应用领域
恩智浦 - NXP 开关光电二极管晶体管
页数 文件大小 规格书
9页 81K
描述
TRANSISTOR 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET General Purpose Small Signal

PMBFJ110-T 技术参数

生命周期:Obsolete零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.2
配置:SINGLE最小漏源击穿电压:25 V
最大漏源导通电阻:18 ΩFET 技术:JUNCTION
最大反馈电容 (Crss):15 pFJEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3工作模式:DEPLETION MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

PMBFJ110-T 数据手册

 浏览型号PMBFJ110-T的Datasheet PDF文件第2页浏览型号PMBFJ110-T的Datasheet PDF文件第3页浏览型号PMBFJ110-T的Datasheet PDF文件第4页浏览型号PMBFJ110-T的Datasheet PDF文件第5页浏览型号PMBFJ110-T的Datasheet PDF文件第6页浏览型号PMBFJ110-T的Datasheet PDF文件第7页 
PMBFJ108; PMBFJ109;  
PMBFJ110  
T23  
SO  
N-channel junction FETs  
Rev. 4 — 20 September 2011  
Product data sheet  
1. Product profile  
1.1 General description  
Symmetrical N-channel junction FETs in a SOT23 package.  
1.2 Features and benefits  
High-speed switching  
Interchangeability of drain and source connections  
Low RDSon at zero gate voltage (8 for PMBFJ108).  
1.3 Applications  
Analog switches  
Choppers and commutators  
Audio amplifiers.  
2. Pinning information  
Table 1.  
Pinning  
Pin  
1
Description[1]  
Simplified outline  
Symbol  
drain  
3
2
source  
1
2
3
gate  
3
1
2
sym053  
[1] Drain and source are interchangeable.  

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