Datasheet > PM557BA

PM557BA

更新时间： 2024-09-15 17:15:27

品牌	Logo	应用领域
尼克森微 - NIKOSEM		/
页数	文件大小	规格书
4页	217K
描述
SOT-23(S)

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中文翻译

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数据手册

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PM557BA 数据手册

P-Channel Enhancement Mode

Field Effect Transistor

PM557BA

NIKO-SEM

SOT-23(S)

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSS

-30V

R_DS(ON)

I_D

-3.3A

48mΩ

Features

• Pb−Free, Halogen Free and RoHS compliant.

• Low R_DS(on)to Minimize Conduction Losses.

• Ohmic Region Good R_DS(on)Ratio.

• Optimized Gate Charge to Minimize Switching Losses.

Applications

• Protection Circuits Applications.

• Logic/Load Switch Circuits Applications.

G: GATE

D: DRAIN

S: SOURCE

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Gate-Source Voltage

SYMBOL

V_GS

LIMITS

±12

UNITS

T_A= 25 °C

T_A= 70 °C

-3.3

Continuous Drain Current

Pulsed Drain Current¹

Power Dissipation

I_D

-2.6

I_DM

-16

T_A= 25 °C

T_A= 70 °C

0.9

P_D

0.6

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

Junction-to-Ambient²

SYMBOL

R_JA

TYPICAL

MAXIMUM

130

UNITS

°C/W

¹Pulse width limited by maximum junction temperature.

²The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz. Copper.

ELECTRICAL CHARACTERISTICS (T_J= 25 °C, Unless Otherwise Noted)

LIMITS

MIN TYP MAX

PARAMETER

SYMBOL

TEST CONDITIONS

UNIT

STATIC

_GS= 0V, I_D= -250A

_DS= V_GS, I_D= -250A

Drain-Source Breakdown Voltage

Gate Threshold Voltage

V_(BR)DSS

V_GS(th)

-30

-0.7 -0.9 -1.3

G-53-3

REV1.1

12 3 4

中文翻译

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