Datasheet > PM569BA

PM569BA

更新时间： 2024-09-16 17:15:27

品牌	Logo	应用领域
尼克森微 - NIKOSEM		/
页数	文件大小	规格书
4页	261K
描述
SOT-23(S)

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中文翻译

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数据手册

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PM569BA 数据手册

P-Channel Enhancement Mode

Field Effect Transistor

PM569BA

NIKO-SEM

SOT-23(S)

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSS

-40V

R_DS(ON)

I_D

-2.5A

70mΩ

Features

• Pb−Free, Halogen Free and RoHS compliant.

• Low R_DS(on)to Minimize Conduction Losses.

• Ohmic Region Good R_DS(on)Ratio.

• Optimized Gate Charge to Minimize Switching Losses.

Applications

• Protection Circuits Applications.

• Logic/Load Switch Circuits Applications.

G: GATE

D: DRAIN

S: SOURCE

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Gate-Source Voltage

SYMBOL

V_GS

LIMITS

±20

UNITS

T_A= 25 °C

T_A= 70 °C

-2.5

Continuous Drain Current

Pulsed Drain Current¹

Power Dissipation³

I_D

-2

I_DM

-8

T_A= 25 °C

T_A= 70 °C

0.7

P_D

0.4

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

Junction-to-Ambient²

Junction-to-Case

SYMBOL

TYPICAL

MAXIMUM

UNITS

°C/W

173

R_JA

R_JC

¹Pulse width limited by maximum junction temperature.

²The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz. Copper.

I-4-3

REV 1.1

12 3 4

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