Datasheet > PM50RSE120_05

PM50RSE120_05

更新时间： 2024-11-18 06:04:19

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
9页	140K
描述
FLAT-BASE TYPE INSULATED PACKAGE

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中文翻译

获取价格

数据手册

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PM50RSE120_05 数据手册

MITMSUITBSIUSBHIS<HINI T<EINLTLEIGLLEINGTENPOTWPOEWR EMROMDUOLDEUSL>ES>

PM50RPMS5E0R1S2E0120

FLAFTL-ABTA-SBEASTEYPTEYPE

INSIUNLSAUTLEADTEPDACPKAACGKAEGE

PM50RSE120

FEATURE

a) Adopting new 4th generation planar IGBT chip, which per-

formance is improved by 1µm fine rule process.

b) Using new Diode which is designed to get soft reverse

recovery characteristics.

• 3φ 50A, 1200V Current-sense IGBT for 15kHz switching

• 15A, 1200V Current-sense regenerative brake IGBT

• Monolithic gate drive & protection logic

• Detection, protection & status indication circuits for over-

current, short-circuit, over-temperature & under-voltage

• Acoustic noise-less 5.5/7.5kW class inverter application

• UL Recognized

Yellow Card No.E80276(N)

FileNo.E80271

APPLICATION

General purpose inverter, servo drives and other motor controls

PACKAGE OUTLINES

Dimensions in mm

110±1

95±0.5

Screwing depth

Min9.0

2-2.54 2-2.54 2-2.54

6-2.54

4-φ5.5

17.02

3.22

10.16 10.16 10.16

MOUNTING HOLES

Terminal code

1. V^UPC

2. U

11. VN1

12. B

13. U

14. V

15. W

16. F

1 2 3

5 6

7 8

12 14 16

11 13 15

3. VUP1

4. VVPC

5. V

6. VVP1

7. VWPC

8. W

9. VWP1

10. VNC

φ2.54

0.5±0.3

4-R6

21.2

2-2.54

24.5

3.22

22⁺^–0¹^.^.⁵⁰

0.64

6-M5NUTS

2-φ2.54

67.4

16- 0.64

A : DETAIL

LABEL

Jul. 2005

12 3 4 5 6 7...9

中文翻译

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