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PM516BA PDF预览

PM516BA

更新时间: 2024-05-23 22:23:30
品牌 Logo 应用领域
尼克森微 - NIKOSEM /
页数 文件大小 规格书
4页 191K
描述
SOT-23(S)

PM516BA 数据手册

 浏览型号PM516BA的Datasheet PDF文件第2页浏览型号PM516BA的Datasheet PDF文件第3页浏览型号PM516BA的Datasheet PDF文件第4页 
N-Channel Enhancement Mode  
Field Effect Transistor  
PM516BA  
NIKO-SEM  
SOT-23(S)  
Halogen-Free & Lead-Free  
D
PRODUCT SUMMARY  
V(BR)DSS  
20V  
RDS(ON)  
ID  
1. GATE  
2. DRAIN  
3. SOURCE  
G
5A  
30mΩ  
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)  
PARAMETERS/TEST CONDITIONS  
Gate-Source Voltage  
SYMBOL  
LIMITS  
UNITS  
VGS  
±8  
V
TA = 25 °C  
TA = 70 °C  
5
3.5  
Continuous Drain Current  
Pulsed Drain Current1  
Power Dissipation  
ID  
IDM  
A
20  
TA = 25 °C  
TA = 70 °C  
0.9  
PD  
W
0.5  
Operating Junction & Storage Temperature Range  
Tj, Tstg  
-55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
THERMAL RESISTANCE  
SYMBOL  
RJA  
TYPICAL  
MAXIMUM  
135  
UNITS  
°C/W  
Junction-to-Ambient  
1Pulse width limited by maximum junction temperature.  
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air  
environment with TA =25°C.  
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)  
LIMITS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
UNIT  
MIN TYP MAX  
STATIC  
Drain-Source Breakdown Voltage  
Gate Threshold Voltage  
Gate-Body Leakage  
V(BR)DSS  
VGS(th)  
IGSS  
20  
VGS = 0V, ID = 250A  
VDS = VGS, ID = 250A  
VDS = 0V, VGS = ±8V  
V
0.5 0.6  
1
±100 nA  
1
VDS = 16V, VGS = 0V  
Zero Gate Voltage Drain Current  
IDSS  
A  
VDS = 10V, VGS = 0V, TJ = 55 °C  
VGS = 1.8V, ID = 2A  
10  
38  
30  
26  
55  
Drain-Source On-State  
Resistance1  
mΩ  
RDS(ON)  
VGS = 2.5V, ID = 4.5A  
VGS = 4.5V, ID = 5A  
38  
30  
E-26-2  
REV 1.1  
1

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