Datasheet > PM513BA

PM513BA

更新时间： 2024-11-19 17:15:47

品牌	Logo	应用领域
尼克森微 - NIKOSEM		/
页数	文件大小	规格书
4页	186K
描述
SOT-23(S)

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中文翻译

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数据手册

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PM513BA 数据手册

PM513BA

SOT-23(S)

Halogen-Free & Lead-Free

P-Channel Enhancement Mode

Field Effect Transistor

NIKO-SEM

PRODUCT SUMMARY

V_(BR)DSS

-20V

R_DS(ON)

I_D

1: GATE

2: DRAIN

3: SOURCE

-3A

100mΩ

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Drain-Source Voltage

SYMBOL

V_DS

LIMITS

-20

UNITS

Gate-Source Voltage

V_GS

±8

T_A= 25 °C

T_A= 70 °C

-3

Continuous Drain Current

Pulsed Drain Current¹

I_D

-2.4

I_DM

P_D

-20

T_A= 25 °C

T_A= 70 °C

0.9

Power Dissipation

0.6

Junction & Storage Temperature Range

T_J, T_stg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

130

UNITS

°C / W

Junction-to-Ambient²

R_JA

¹limited by maximum junction temperature.

²The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air

environment with T_A=25°C.

ELECTRICAL CHARACTERISTICS (T_J= 25 °C, Unless Otherwise Noted)

LIMITS

MIN TYP MAX

PARAMETER

SYMBOL

TEST CONDITIONS

STATIC

UNIT

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

V_(BR)DSS

V_GS(th)

I_GSS

-20

V_GS= 0V, I_D= -250A

V_DS= V_GS, I_D= -250A

V_DS= 0V, V_GS= ±8V

-0.3 -0.5

-1

±100 nA

-1

V_DS= -16V, V_GS= 0V

V_DS= -10V, V_GS= 0V, T_J= 70 °C

V_GS= -1.8V, I_D= -1A

Zero Gate Voltage Drain Current

I_DSS

A

-10

140 190

109 130

Drain-Source On-State

Resistance¹

V_GS= -2.5V, I_D= -2A

R_DS(on)

mΩ

V_GS= -4.5V, I_D= -2.5A

V_DS=-5V, V_GS= -4.5V

V_DS= -5V, I_D= -2.5A

100

On-State Drain Current¹

Forward Transconductance¹

I_D(ON)

g_fs

-20

8.1

E-28-5

REV 1.0

12 3 4

中文翻译

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