Datasheet > PM514BA

PM514BA

更新时间： 2024-05-23 22:23:44

品牌	Logo	应用领域
尼克森微 - NIKOSEM		/
页数	文件大小	规格书
4页	200K
描述
SOT-23(S)

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中文翻译

获取价格

数据手册

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PM514BA 数据手册

N-Channel Enhancement Mode

Field Effect Transistor

PM514BA

NIKO-SEM

SOT-23(S)

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSS

20V

R_DS(ON)

I_D

G. GATE

D. DRAIN

S. SOURCE

3.3A

40mΩ

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Gate-Source Voltage

SYMBOL

LIMITS

±8

UNITS

V_GS

T_A= 25 °C

T_A= 70 °C

3.3

Continuous Drain Current

Pulsed Drain Current¹

Power Dissipation

I_D

I_DM

2.7

T_A= 25 °C

T_A= 70 °C

0.7

P_D

0.4

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

Junction-to-Ambient²

SYMBOL

R_JA

TYPICAL

MAXIMUM

170

UNITS

°C/W

¹Pulse width limited by maximum junction temperature.

²The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air

environment with T_A=25°C.

ELECTRICAL CHARACTERISTICS (T_J= 25 °C, Unless Otherwise Noted)

LIMITS

PARAMETER

SYMBOL

TEST CONDITIONS

UNIT

MIN TYP MAX

STATIC

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

V_(BR)DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250A

V_DS= V_GS, I_D= 250A

V_DS= 0V, V_GS= ±8V

V_DS= 16V, V_GS= 0V

V_DS= 10V, V_GS= 0V, T_J= 55 °C

V_GS= 1.8V, I_D= 2.5A

V_GS= 2.5V, I_D= 2.8A

V_GS= 4.5V, I_D= 3A

0.5 0.7

±100 nA

Zero Gate Voltage Drain Current

I_DSS

A

Drain-Source On-State

Resistance¹

mΩ

R_DS(ON)

Forward Transconductance¹

g_fs

V_DS= 5V, I_D= 3A

E-35-2

REV 1.0

12 3 4

中文翻译

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