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PM515BA PDF预览

PM515BA

更新时间: 2024-11-22 17:15:51
品牌 Logo 应用领域
尼克森微 - NIKOSEM /
页数 文件大小 规格书
4页 246K
描述
SOT-23(S)

PM515BA 数据手册

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PM515BA  
SOT-23(S)  
Halogen-Free & Lead-Free  
P-Channel Enhancement Mode  
Field Effect Transistor  
NIKO-SEM  
PRODUCT SUMMARY  
D
S
V(BR)DSS  
-20V  
RDS(ON)  
ID  
-3.8A  
65mΩ  
G
Features  
• Pb−Free, Halogen Free and RoHS compliant.  
• Low RDS(on) to Minimize Conduction Losses.  
• Ohmic Region Good RDS(on) Ratio.  
• Optimized Gate Charge to Minimize Switching Losses.  
G: GATE  
D: DRAIN  
S: SOURCE  
Applications  
Protection Circuits Applications.  
Logic/Load Switch Circuits Applications.  
100% UIS Tested  
100% Rg Tested  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)  
PARAMETERS/TEST CONDITIONS  
Drain-Source Voltage  
SYMBOL  
VDS  
LIMITS  
-20  
UNITS  
V
V
Gate-Source Voltage  
VGS  
±8  
TA = 25 °C  
TA = 70 °C  
-3.8  
Continuous Drain Current  
Pulsed Drain Current1  
ID  
-3  
A
IDM  
PD  
-20  
TA = 25 °C  
TA = 70 °C  
1.3  
Power Dissipation3  
W
0.88  
-55 to 150  
Junction & Storage Temperature Range  
TJ, Tstg  
°C  
THERMAL RESISTANCE RATINGS  
THERMAL RESISTANCE  
SYMBOL  
RJA  
TYPICAL  
MAXIMUM  
UNITS  
Junction-to-Ambient2  
90  
t 10s  
°C / W  
Junction-to-Ambient2  
Steady-State  
131  
RJA  
1limited by maximum junction temperature.  
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air  
environment with TA =25°C.  
3The Power dissipation is based on RJA t 10s value.  
1
I-2-2  
REV 1.1  

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