N-Channel Enhancement Mode
Field Effect Transistor
PM506BA
NIKO-SEM
SOT-23(S)
Halogen-Free & Lead-Free
D
PRODUCT SUMMARY
1: GATE
2: DRAIN
3: SOURCE
V(BR)DSS
30V
RDS(ON)
ID
G
3.5A
60mΩ
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
Gate-Source Voltage
SYMBOL
LIMITS
±20
UNITS
VGS
V
TA = 25 °C
TA = 70 °C
3.5
Continuous Drain Current
Pulsed Drain Current1
Power Dissipation3
ID
IDM
2.8
A
20
TA = 25 °C
TA = 70 °C
1.3
PD
W
0.8
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
° C
THERMAL RESISTANCE RATING
THERMAL RESISTANCE
SYMBOL
RJA
TYPICAL
MAXIMUM
UNITS
°C / W
Junction-to-Ambient2
90
t ≦10s
Junction-to-Ambient2
160
Steady-State
RJA
1Pulse width limited by maximum junction temperature.
2 The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3The Power dissipation is based on RJA t ≦10s value.
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
LIMITS
PARAMETER
SYMBOL
TEST CONDITIONS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
30
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
V
1
1.5
2.5
±100
1
nA
A
Zero Gate Voltage Drain Current
IDSS
VDS = 20V, VGS = 0V, TJ = 125 °C
VGS = 10V, ID = 3A
10
Drain-Source On-State
Resistance1
44
68
60
mΩ
RDS(ON)
VGS = 4.5V, ID = 1.5A
100
J-23-2
REV1.1
1