Datasheet > PM506BA

PM506BA

更新时间： 2024-09-27 17:15:31

品牌	Logo	应用领域
尼克森微 - NIKOSEM		/
页数	文件大小	规格书
4页	421K
描述
SOT-23(S)

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中文翻译

获取价格

数据手册

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PM506BA 数据手册

N-Channel Enhancement Mode

Field Effect Transistor

PM506BA

NIKO-SEM

SOT-23(S)

Halogen-Free & Lead-Free

PRODUCT SUMMARY

1: GATE

2: DRAIN

3: SOURCE

V_(BR)DSS

30V

R_DS(ON)

I_D

3.5A

60mΩ

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Gate-Source Voltage

SYMBOL

LIMITS

±20

UNITS

V_GS

T_A= 25 °C

T_A= 70 °C

3.5

Continuous Drain Current

Pulsed Drain Current¹

Power Dissipation³

I_D

I_DM

2.8

T_A= 25 °C

T_A= 70 °C

1.3

P_D

0.8

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

° C

THERMAL RESISTANCE RATING

THERMAL RESISTANCE

SYMBOL

R_JA

TYPICAL

MAXIMUM

UNITS

°C / W

Junction-to-Ambient²

t ≦10s

Junction-to-Ambient²

160

Steady-State

R_JA

¹Pulse width limited by maximum junction temperature.

²The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air

environment with T_A=25°C.

³The Power dissipation is based on R_JAt ≦10s value.

ELECTRICAL CHARACTERISTICS (T_J= 25 °C, Unless Otherwise Noted)

LIMITS

PARAMETER

SYMBOL

TEST CONDITIONS

UNITS

MIN TYP MAX

STATIC

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

V_(BR)DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250A

V_DS= V_GS, I_D= 250A

V_DS= 0V, V_GS= ±20V

V_DS= 24V, V_GS= 0V

1.5

2.5

±100

A

Zero Gate Voltage Drain Current

I_DSS

V_DS= 20V, V_GS= 0V, T_J= 125 °C

V_GS= 10V, I_D= 3A

Drain-Source On-State

Resistance¹

mΩ

R_DS(ON)

V_GS= 4.5V, I_D= 1.5A

100

J-23-2

REV1.1

12 3 4

中文翻译

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