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PM506BA PDF预览

PM506BA

更新时间: 2024-11-02 17:15:31
品牌 Logo 应用领域
尼克森微 - NIKOSEM /
页数 文件大小 规格书
4页 421K
描述
SOT-23(S)

PM506BA 数据手册

 浏览型号PM506BA的Datasheet PDF文件第2页浏览型号PM506BA的Datasheet PDF文件第3页浏览型号PM506BA的Datasheet PDF文件第4页 
N-Channel Enhancement Mode  
Field Effect Transistor  
PM506BA  
NIKO-SEM  
SOT-23(S)  
Halogen-Free & Lead-Free  
D
PRODUCT SUMMARY  
1: GATE  
2: DRAIN  
3: SOURCE  
V(BR)DSS  
30V  
RDS(ON)  
ID  
G
3.5A  
60mΩ  
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)  
PARAMETERS/TEST CONDITIONS  
Gate-Source Voltage  
SYMBOL  
LIMITS  
±20  
UNITS  
VGS  
V
TA = 25 °C  
TA = 70 °C  
3.5  
Continuous Drain Current  
Pulsed Drain Current1  
Power Dissipation3  
ID  
IDM  
2.8  
A
20  
TA = 25 °C  
TA = 70 °C  
1.3  
PD  
W
0.8  
Operating Junction & Storage Temperature Range  
Tj, Tstg  
-55 to 150  
° C  
THERMAL RESISTANCE RATING  
THERMAL RESISTANCE  
SYMBOL  
RJA  
TYPICAL  
MAXIMUM  
UNITS  
°C / W  
Junction-to-Ambient2  
90  
t 10s  
Junction-to-Ambient2  
160  
Steady-State  
RJA  
1Pulse width limited by maximum junction temperature.  
2 The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air  
environment with TA =25°C.  
3The Power dissipation is based on RJA t 10s value.  
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)  
LIMITS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
UNITS  
MIN TYP MAX  
STATIC  
Drain-Source Breakdown Voltage  
Gate Threshold Voltage  
Gate-Body Leakage  
V(BR)DSS  
VGS(th)  
IGSS  
30  
VGS = 0V, ID = 250A  
VDS = VGS, ID = 250A  
VDS = 0V, VGS = ±20V  
VDS = 24V, VGS = 0V  
V
1
1.5  
2.5  
±100  
1
nA  
A  
Zero Gate Voltage Drain Current  
IDSS  
VDS = 20V, VGS = 0V, TJ = 125 °C  
VGS = 10V, ID = 3A  
10  
Drain-Source On-State  
Resistance1  
44  
68  
60  
mΩ  
RDS(ON)  
VGS = 4.5V, ID = 1.5A  
100  
J-23-2  
REV1.1  
1

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