Datasheet > PM509BA

PM509BA

更新时间： 2024-05-23 22:22:22

品牌	Logo	应用领域
尼克森微 - NIKOSEM		/
页数	文件大小	规格书
4页	211K
描述
SOT-23(S)

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中文翻译

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数据手册

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PM509BA 数据手册

P-Channel Enhancement Mode

Field Effect Transistor

PM509BA

NIKO-SEM

SOT-23(S)

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSS

-30V

R_DS(ON)

I_D

G. GATE

D. DRAIN

S. SOURCE

-2A

120mΩ

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Drain-Source Voltage

SYMBOL

V_DS

LIMITS

-30

UNITS

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current¹

Power Dissipation

V_GS

±20

T_A= 25 °C

T_A= 70 °C

-2

I_D

I_DM

-1.5

-8

T_A= 25 °C

T_A= 70 °C

0.7

P_D

0.4

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

Junction-to-Ambient²

SYMBOL

R_JA

TYPICAL

MAXIMUM

177

UNITS

°C/W

¹Pulse width limited by maximum junction temperature.

²The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz. Copper.

ELECTRICAL CHARACTERISTICS (T_J= 25 °C, Unless Otherwise Noted)

LIMITS

MIN TYP MAX

PARAMETER

SYMBOL

TEST CONDITIONS

UNIT

STATIC

_GS= 0V, I_D= -250A

_DS= V_GS, I_D= -250A

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

V_(BR)DSS

V_GS(th)

I_GSS

-30

-1

-1.7

-3

V_DS= 0V, V_GS= ±20V

V_DS= -24V, V_GS= 0V

±100 nA

-1

Zero Gate Voltage Drain Current

On-State Drain Current¹

I_DSS

I_D(ON)

A

V_DS= -20V, V_GS= 0V, T_J= 55 °C

V_DS= -10V, V_GS= -10V

V_GS= -4.5V, I_D= -1.5A

V_GS=-10V, I_D= -2A

-10

-8

134 180

98 120

Drain-Source On-State

Resistance¹

mΩ

R_DS(ON)

G-28-1

REV 1.1

12 3 4

中文翻译

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