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PM39LV010-55JC PDF预览

PM39LV010-55JC

更新时间： 2024-11-12 06:02:35
品牌 Logo 应用领域
美国芯成 - ISSI 内存集成电路
页数 文件大小 规格书
20页 1152K
描述
Flash, 128KX8, 55ns, PQCC32,

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中文翻译

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PM39LV010-55JC 技术参数

是否Rohs认证：不符合生命周期：Active
Reach Compliance Code：compliant风险等级：5.8
Is Samacsys：N最长访问时间：55 ns
命令用户界面：YES数据轮询：YES
JESD-30 代码：R-PQCC-J32内存密度：1048576 bit
内存集成电路类型：FLASH内存宽度：8
部门数/规模：32端子数量：32
字数：131072 words字数代码：128000
最高工作温度：85 °C最低工作温度：
组织：128KX8封装主体材料：PLASTIC/EPOXY
封装代码：QCCJ封装等效代码：LDCC32,.5X.6
封装形状：RECTANGULAR封装形式：CHIP CARRIER
并行/串行：PARALLEL电源：3/3.3 V
认证状态：Not Qualified部门规模：4K
最大待机电流：0.000005 A子类别：Flash Memories
最大压摆率：0.02 mA表面贴装：YES
技术：CMOS温度等级：OTHER
端子形式：J BEND端子节距：1.27 mm
端子位置：QUAD切换位：YES
类型：NOR TYPEBase Number Matches：1

PM39LV010-55JC 数据手册

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Pm39LV512 / Pm39LV010 / Pm39LV020 / Pm39LV040  
512 Kbit / 1Mbit / 2Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory  
FEATURES  
• Single Power Supply Operation  
- Low voltage range: 2.7 V - 3.6 V  
• Automatic Erase and Byte Program  
- Build-in automatic program verification  
- Typical 16 µs/byte programming time  
- Typical 55 ms sector/block/chip erase time  
• Memory Organization  
- Pm39LV512: 64K x 8 (512 Kbit)  
- Pm39LV010: 128K x 8 (1 Mbit)  
- Pm39LV020: 256K x 8 (2 Mbit)  
- Pm39LV040: 512K x 8 (4 Mbit)  
• Low Power Consumption  
- Typical 4 mA active read current  
- Typical 8 mA program/erase current  
- Typical 0.1 µA CMOS standby current  
• High Performance Read  
- 55/70 ns access time  
• High Product Endurance  
- Guarantee 100,000 program/erase cycles per  
single sector (preliminary)  
- Minimum 20 years data retention  
• Cost Effective Sector/Block Architecture  
- Uniform 4 Kbyte sectors  
- Uniform 64 Kbyte blocks (sector group - except  
Pm39LV512)  
• Industrial Standard Pin-out and Packaging  
- 32-pin (8 mm x 14 mm) VSOP  
- 32-pin PLCC  
• Data# Polling and Toggle Bit Features  
• Hardware Data Protection  
- Optional lead-free (Pb-free) package  
GENERAL DESCRIPTION  
The Pm39LV512/010/020/040 are 512 Kbit/1 Mbit/2 Mbit/4 Mbit 3.0 Volt-only Flash Memories. These devices are  
designed to use a single low voltage, range from 2.7 Volt to 3.6 Volt, power supply to perform read, erase and  
program operations. The 12.0 Volt VPP power supply for program and erase operations are not required. The devices  
can be programmed in standard EPROM programmers as well.  
The memory array of Pm39LV512 is divided into uniform 4 Kbyte sectors for data or code storage. The memory  
arrays of Pm39LV010/020/040 are divided into uniform 4 Kbyte sectors or uniform 64 Kbyte blocks (sector group -  
consists of sixteen adjacent sectors). The sector or block erase feature allows users to flexibly erase a memory  
area as small as 4 Kbyte or as large as 64 Kbyte by one single erase operation without affecting the data in others.  
The chip erase feature allows the whole memory array to be erased in one single erase operation. The devices can  
be programmed on a byte-by-byte basis after performing the erase operation.  
The devices have a standard microprocessor interface as well as a JEDEC standard pin-out/command set. The  
program operation is executed by issuing the program command code into command register. The internal control  
logic automatically handles the programming voltage ramp-up and timing. The erase operation is executed by  
issuing the chip erase, block, or sector erase command code into command register. The internal control logic  
automatically handles the erase voltage ramp-up and timing. The preprogramming on the array which has not been  
programmed is not required before an erase operation. The devices offer Data# Polling and Toggle Bit functions, the  
progress or completion of program and erase operations can be detected by reading the Data# Polling on I/O7 or  
the Toggle Bit on I/O6.  
The Pm39LV512/010/020/040 are manufactured on pFLASH™’s advanced nonvolatile CMOS technology. The de-  
vices are offered in 32-pin VSOP and PLCC packages with 70 ns access time.  
Chingis Technology Corporation  
Issue Date: April, 2006 Rev:1.6  
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PM39LV010-70 PMC

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 		512 Kbit / 1Mbit / 2Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory
PM39LV010-70JC PMC

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 		512 Kbit / 1Mbit / 2Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory
PM39LV010-70JCE PMC

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 		512 Kbit / 1Mbit / 2Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory
PM39LV010-70VC PMC

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 		512 Kbit / 1Mbit / 2Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory
PM39LV010-70VCE PMC

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 		512 Kbit / 1Mbit / 2Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory
PM39LV010-70WC ISSI

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 		Flash, 128KX8, 70ns, DIE
PM39LV020 PMC

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 		512 Kbit / 1Mbit / 2Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory
PM39LV020-55JC ISSI

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 		Flash, 256KX8, 55ns, PQCC32,
PM39LV020-55JCE ISSI

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 		Flash, 256KX8, 55ns, PQCC32,

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