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PM39F040-70PCE PDF预览

PM39F040-70PCE

更新时间： 2024-11-11 20:33:47
品牌 Logo 应用领域
美国芯成 - ISSI 光电二极管内存集成电路
页数 文件大小 规格书
23页 104K
描述
Flash, 512KX8, 70ns, PDIP32,

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中文翻译

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PM39F040-70PCE 技术参数

是否Rohs认证：符合生命周期：Active
Reach Compliance Code：compliant风险等级：5.75
Is Samacsys：N最长访问时间：70 ns
命令用户界面：YES数据轮询：YES
JESD-30 代码：R-PDIP-T32内存密度：4194304 bit
内存集成电路类型：FLASH内存宽度：8
部门数/规模：128端子数量：32
字数：524288 words字数代码：512000
最高工作温度：85 °C最低工作温度：
组织：512KX8封装主体材料：PLASTIC/EPOXY
封装代码：DIP封装等效代码：DIP32,.6
封装形状：RECTANGULAR封装形式：IN-LINE
并行/串行：PARALLEL电源：5 V
认证状态：Not Qualified部门规模：4K
最大待机电流：0.00001 A子类别：Flash Memories
最大压摆率：0.02 mA标称供电电压 (Vsup)：5 V
表面贴装：NO技术：CMOS
温度等级：OTHER端子形式：THROUGH-HOLE
端子节距：2.54 mm端子位置：DUAL
切换位：YES类型：NOR TYPE
Base Number Matches：1

PM39F040-70PCE 数据手册

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PMC  
Pm39F010 / Pm39F020 / Pm39F040  
1 Mbit / 2 Mbit / 4 Mbit 5 Volt-only CMOS Flash Memory  
FEATURES  
• Single Power Supply Operation  
- Low voltage range: 4.5 V - 5.5 V  
• Automatic Erase and Byte Program  
- Typical 16 µs/byte programming time  
- Typical 55 ms sector/block/chip erase time  
• Memory Organization  
- Pm39F010: 128K x 8 (1 Mbit)  
- Pm39F020: 256K x 8 (2 Mbit)  
- Pm39F040: 512K x 8 (4 Mbit)  
• Low Power Consumption  
- Typical 8 mA active read current  
- Typical 9 mA program/erase current  
- Typical 0.5 µA CMOS standby current  
• High Performance Read  
- 55/70 ns access time  
• High Product Endurance  
- Guarantee 100,000 program/erase cycles per  
• Cost Effective Sector/Block Architecture  
- Uniform 4 Kbyte sectors  
single sector (preliminary)  
- Minimum 20 years data retention  
- Uniform 64 Kbyte blocks (sector-group)  
• Industrial Standard Pin-out and Packaging  
- 32-pin Plastic DIP  
- 32-pin PLCC  
- 32-pin VSOP (TSOP 8mm x 14mm)  
- Optional lead-free (Pb-free) packages  
• Data# Polling and Toggle Bit Features  
• Hardware Data Protection  
GENERAL DESCRIPTION  
The Pm39F010/020/040 are 1 Mbit/2 Mbit/4 Mbit 5.0 Volt-only Flash Memories. These devices are designed to use  
a single low voltage, range from 4.5 Volt to 5.5 Volt, power supply to perform read, erase and program operations.  
The 12.0 Volt VPP power supply for program and erase operations are not required. The devices can be programmed  
in standard EPROM programmers as well.  
The memory arrays of Pm39F010/020/040 are divided into uniform 4 Kbyte sectors or uniform 64 Kbyte blocks  
(sector group - consists of sixteen adjacent sectors). The sector or block erase feature allows users to flexibly  
erase an memory area as small as 4 Kbyte or as large as 64 Kbyte by one single erase operation without affecting  
the data in others. The chip erase feature allows the whole memory array to be erased in one single erase opera-  
tion. The devices can be programmed on a byte-by-byte basis after performing the erase operation.  
The devices have a standard microprocessor interface as well as a JEDEC standard pin-out/command set. The  
program operation is executed by issuing the program command code into command register. The internal control  
logic automatically handles the programming voltage ramp-up and timing. The erase operation is executed by  
issuing the chip erase, block, or sector erase command code into command register. The internal control logic  
automatically handles the erase voltage ramp-up and timing. The preprogramming on the array which has not been  
programmed is not required before an erase operation. The devices offer Data# Polling and Toggle Bit functions, the  
progress or completion of program and erase operations can be detected by reading the Data# Polling on I/O7 or  
the Toggle Bit on I/O6.  
The Pm39F010/020/040 are manufactured on PMC’s advanced nonvolatile CMOS technology, P-FLASH™. The  
devices are offered in 32-pin PDIP, PLCC and VSOP packages with access time of 55 and 70 ns.  
Programmable Microelectronics Corp.  
Issue Date: March 2004, Rev:1.3  
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PM39LV010-70JC PMC

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 		512 Kbit / 1Mbit / 2Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory
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 		512 Kbit / 1Mbit / 2Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory
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