Datasheet > PJU7NA60

PJU7NA60

更新时间： 2024-09-11 01:19:15

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
9页	475K
描述
600V N-Channel MOSFET

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中文翻译

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数据手册

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PJU7NA60 数据手册

PPJU7NA60 / PJU7NA60-1 / PJD7NA60 / PJP7NA60 / PJF7NA60

600V N-Channel MOSFET

600 V

7 A

Voltage

Current

Features



R_DS(ON), V_GS@10V,I_D@3.5A<1.2Ω

High switching speed

ITO-220AB-F

TO-220AB

Improved dv/dt capability

Low Gate Charge

Low reverse transfer capacitance

Lead free in compliance with EU RoHS 2011/65/EU directive.

Green molding compound as per IEC61249 Std. (Halogen Free)

TO-252AA

TO-251AA

TO-251AA-1

Mechanical Data



Case: TO-251AA, TO-251AA -1,TO-252AA ,TO-220AB, ITO-220AB-F Package

Terminals : Solderable per MIL-STD-750, Method 2026

TO-251AA Approx. Weight : 0.0104 ounces, 0.297grams

TO-251AA-1 Approx. Weight : 0.0118 ounces, 0.336grams

TO-252AA Approx. Weight : 0.0104 ounces, 0.297grams



TO-220AB Approx. Weight : 0.067 ounces, 1.9 grams

ITO-220AB-F Approx. Weight : 0.068 ounces, 2 grams

Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)

TO-251AA

PARAMETER

Drain-Source Voltage

SYMBOL

TO-220AB

ITO-220AB-F

TO-252AA

UNITS

TO-251AA-1

V_DS

V_GS

I_D

600

Gate-Source Voltage

+30

Continuous Drain Current

Pulsed Drain Current

Single Pulse Avalanche Energy ^{(Note 1)}

I_DM

E_AS

489

T_C=25^oC

Power Dissipation

140

145

140

W/ ^oC

P_D

Derate above 25^oC

1.12

1.16

0.36

1.12

Operating Junction and

T_J,T_STG

-55~150

^oC

Storage Temperature Range

Typical Thermal resistance

^oC/W

R_θJC

R_θJA

0.89

110

0.88

62.5

2.78

120

0.89

110

Junction to Case

Junction to Ambient

 Limited only By Maximum Junction Temperature

March 16,2015-REV.01

Page 1

12 3 4 5 6 7...9

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