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PHC21025 PDF预览

PHC21025

更新时间: 2024-01-06 22:41:07
品牌 Logo 应用领域
恩智浦 - NXP 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
16页 165K
描述
Complementary enhancement mode MOS transistors

PHC21025 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:,Reach Compliance Code:unknown
风险等级:5.6Is Samacsys:N
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-609代码:e4
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:N-CHANNEL AND P-CHANNEL最大功率耗散 (Abs):2 W
子类别:Other Transistors表面贴装:YES
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)Base Number Matches:1

PHC21025 数据手册

 浏览型号PHC21025的Datasheet PDF文件第3页浏览型号PHC21025的Datasheet PDF文件第4页浏览型号PHC21025的Datasheet PDF文件第5页浏览型号PHC21025的Datasheet PDF文件第7页浏览型号PHC21025的Datasheet PDF文件第8页浏览型号PHC21025的Datasheet PDF文件第9页 
Philips Semiconductors  
Product specification  
Complementary enhancement  
mode MOS transistors  
PHC21025  
SYMBOL  
Crss  
PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
reverse transfer capacitance  
N-channel  
V
GS = 0; VDS = 20 V; f = 1 MHz  
50  
50  
pF  
pF  
P-channel  
V
GS = 0; VDS = 20 V; f = 1 MHz  
QG  
total gate charge  
N-channel  
V
GS = 10 V; VDS = 15 V; ID = 2.3 A  
10  
10  
30  
25  
nC  
nC  
P-channel  
VGS = 10 V; VDS = 15 V; ID = 2.3 A −  
QGS  
gate-source charge  
N-channel  
V
GS = 10 V; VDS = 15 V; ID = 2.3 A  
1
1
nC  
nC  
P-channel  
VGS = 10 V; VDS = 15 V; ID = 2.3 A −  
QGD  
gate-drain charge  
N-channel  
V
GS = 10 V; VDS = 15 V; ID = 2.3 A  
2.5  
3
nC  
nC  
P-channel  
VGS = 10 V; VDS = 15 V; ID = 2.3 A −  
Switching times  
ton turn-on time  
N-channel  
VGS = 0 to 10 V; VDD = 20 V;  
ID = 1 A; RL = 20 Ω  
15  
20  
40  
80  
ns  
ns  
P-channel  
VGS = 0 to 10 V; VDD = 20 V;  
ID = 1 A; RL = 20 Ω  
toff  
turn-off time  
N-channel  
V
GS = 10 to 0 V; VDD = 20 V;  
ID = 1 A; RL = 20 Ω  
GS = 10 to 0 V; VDD = 20 V;  
ID = 1 A; RL = 20 Ω  
25  
50  
140  
140  
ns  
ns  
P-channel  
V
Source-drain diode  
VSD source-drain diode forward  
voltage  
N-channel  
V
GD = 0; IS = 1.25 A  
1.2  
V
V
P-channel  
reverse recovery time  
N-channel  
VGD = 0; IS = 1.25 A  
1.6  
trr  
IS = 1.25 A; di/dt = 100 A/µs  
IS = 1.25 A; di/dt = 100 A/µs  
35  
100  
200  
ns  
ns  
P-channel  
150  
1997 Jun 20  
6

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