Datasheet > PHC21025/T3

PHC21025/T3

更新时间： 2024-01-01 17:02:12

品牌	Logo	应用领域
恩智浦 - NXP		开关光电二极管晶体管
页数	文件大小	规格书
16页	240K
描述
TRANSISTOR 3500 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA, PLASTIC, MS-012, SOP-8, FET General Purpose Small Signal

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技术参数
数据手册

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PHC21025/T3 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code：	compliant	风险等级：	5.67
配置：	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	最小漏源击穿电压：	30 V
最大漏极电流 (ID)：	3.5 A	最大漏源导通电阻：	0.1 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JEDEC-95代码：	MS-012AA
JESD-30 代码：	R-PDSO-G8	元件数量：	2
端子数量：	8	工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	N-CHANNEL AND P-CHANNEL
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

PHC21025/T3 数据手册

PHC21025

SO8

Complementary intermediate level FET

Rev. 04 — 17 March 2011

Product data sheet

1. Product profile

1.1 General description

Intermediate level N-channel and P-channel complementary pair enhancement mode

Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This

product is designed and qualified for use in computing, communications, consumer and

industrial applications only.

1.2 Features and benefits

Low conduction losses due to low

Suitable for high frequency

applications due to fast switching

characteristics

on-state resistance

1.3 Applications

Motor and actuator drivers

Power management

Synchronized rectification

1.4 Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min Typ Max Unit

V_DS

drain-source voltage

T_j≥ 25 °C; T_j≤ 150 °C;

N-channel

T_j≥ 25 °C; T_j≤ 150 °C;

-30

P-channel

I_D

drain current

T_sp≤ 80 °C; P-channel

T_sp≤ 80 °C; N-channel

-2.3

3.5

[1]

P_tot

total power dissipation T_amb= 25 °C

Static characteristics

R_DSondrain-source on-state V_GS= -10 V; I_D= -1 A;

0.22 0.25

0.08 0.1

Ω

resistance

T_j= 25 °C; P-channel;

see Figure 16; see Figure 19

V_GS= 10 V; I_D= 2.2 A;

T_j= 25 °C; N-channel;

see Figure 15; see Figure 18

12 3 4 5 6 7...16

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